An electric circuit board includes an insulating substrate, a metal plate, and a brazing material with which the insulating substrate and the metal plate are joined together. The metal plate has a side surface over which recessed portions are scattered. The side surface of the metal plate has lines in regions around the recessed portions. The metal plate is made of copper or a copper alloy. The brazing material has a side surface that is continuous with the side surface of the metal plate. The brazing material is a silver-copper brazing alloy. A ratio of copper on the side surface of the brazing material is higher than a copper component ratio of the silver-copper brazing alloy.

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: providing a ceramic element (10) and a metal layer, providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

When a laminate of a plurality of different materials including a metal plate is bonded in a pressurized and heated state, a first pressurizing member in which a first metal foil/a carbon sheet or a ceramic sheet/a graphite sheet are laminated in this order is arranged so that the first metal foil is in contact with a surface of the first metal plate of the laminate, the first metal foil is made of a material that does not react at a contact surface of the first plate member and the first metal foil when heating, and a product of a Young's modulus (GPa) and a thickness (mm) of the first metal foil is 0.6 or more and 100 or less, so that a good bonded body can be manufactured by evenly pressurizing the laminate and foreign substances can be restrained from adhering to the surface of the laminate.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

Disclosed are a multi-layer composite ceramic plate and a manufacturing method thereof. The composite ceramic plate includes at least one basic sandwich structure. The manufacturing method includes: preparing a sheet-like green body with ceramic powders; pre-sintering the green body at a pre-sintering temperature lower than the sintering temperature to obtain a pre-sintered ceramic member with certain strength; forming a metal electrode layer on an upper surface of the pre-sintered ceramic member; placing the pre-sintered ceramic member in a mold, with the upper surface coated with the metal electrode layer facing upwards; providing a ceramic precursor layer on the upper surface of the pre-sintered ceramic member; carrying out hot-pressing sintering in the axial direction of the pre-sintered ceramic member at the sintering temperature to form an integral structure, wherein by the hot-pressing sintering, a second ceramic layer is formed by the pre-sintered ceramic member, a first ceramic layer is formed by the ceramic precursor layer, and the metal electrode layer is located between the first ceramic layer and the second ceramic layer to from a basic sandwich structure together with the first ceramic layer and the second ceramic layer.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

A copper/ceramic bonded body of the present invention is formed by bonding a copper member, which is formed of copper or a copper alloy, and a ceramic member, in which a ratio D1/D0 is 0.60 or less, D0 being an average crystal grain size of the entire copper member, D1 being an average crystal grain size of the copper member at a position 50 μm from a bonding surface with the ceramic member, D0 and D1 being obtained by observing a cross-section of the copper member along a laminating direction.