Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated. A slit is formed in the circuit layer. A recess recessed from one surface side facing the insulating layer toward the other surface side is formed in the metal layer. The recess of the metal layer has a relaxation portion at least partially overlapping the slit of the circuit layer in a planar view.

According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.

An airfoil includes a ceramic matrix composite airfoil core that defines an airfoil portion and a root portion. The ceramic matrix composite airfoil core is subject to core thermal growth. A platform includes a ceramic matrix composite that wraps around the root portion. The platform is subject to platform thermal growth. A buffer layer is located between the root portion and the platform. The buffer layer absorbs a mismatch between the core thermal growth and the platform thermal growth.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

Production of multilayered ceramic missile radomes with wide frequency band and high electromagnetic permeability through three-dimensional printing technology and the use of glass inter-layer materials to minimize defects caused by thermo-mechanical incompatibility of adjacent layers during sintering are provided. The three dimensional printing of the multilayered ceramic missile radomes provide an automated, operator-independent and repeatable manufacturing technique to produce wide band ceramic missile radomes.

A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.

This disclosure provides a method of pressure sintering an environmental barrier coating on a surface of a ceramic substrate to form an article. The method includes the steps of etching the surface of the ceramic substrate to texture the surface, disposing an environmental barrier coating on the etched surface of the ceramic substrate wherein the environmental barrier coating includes a rare earth silicate, and pressure sintering the environmental barrier coating on the etched surface of the ceramic substrate in an inert or nitrogen atmosphere at a pressure of greater than atmospheric pressure such that at least a portion of the environmental barrier coating is disposed in the texture of the surface of the ceramic substrate thereby forming the article.

A method of producing a copper/ceramic bonded body, the copper member having a composition having a Cu purity of 99.96 mass % or more, a balance of inevitable impurities, a P content of 2 mass ppm or less, and a total content of Pb, Se and Te of 10 mass ppm or less, the method includes bonding the laminated copper member and the ceramic member by pressing and heating, wherein an average crystal grain size of the copper member before bonding is 10 μm or more, an aspect ratio is 2 or less, and a pressing load is 0.05 MPa or more and 1.5 MPa or less, a heating temperature is 800° C. or higher and 850° C. or lower, and a holding time at the heating temperature is 10 minutes or longer and 90 minutes or shorter.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.