Patent classifications
C04B2237/368
MULTI-PHASIC CERAMIC COMPOSITE
A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.
LAMINATED CERAMIC CHIP COMPONENT INCLUDING NANO THIN FILM LAYER, MANUFACTURING METHOD THEREFOR, AND ATOMIC LAYER VAPOR DEPOSITION APPARATUS THEREFOR
The present disclosure discloses the laminated ceramic chimp component including an element part having a ceramic main body and an internal electrode placed in the ceramic main body; an external electrode part having a first external electrode and a second external electrode, the first and second external electrodes being provided with side electrodes covering both side surfaces of the ceramic main body, respectively, upper electrodes covering portions of both sides of an upper surface of the ceramic main body, respectively, and lower electrodes covering portions of both sides of a lower surface of the ceramic main body, respectively; and a nano thin film layer formed of electric insulation material and applied to a region including the upper electrodes, the method for manufacturing the same and the atomic layer deposition apparatus for the same.
Wafer mounting table and method of manufacturing the same
A wafer mounting table includes a first electrode and a second electrode buried inside of a ceramic substrate having a wafer mounting surface so as to be parallel to the wafer mounting surface with the first electrode closer to the wafer mounting surface than the second electrode. The wafer mounting table includes a conductive section that electrically conducts the first electrode and the second electrode. The conductive section is such that a plurality of circular members comprised of plate-shaped metal meshes parallel to the wafer mounting surface are stacked between the first electrode and the second electrode.
Copper/ceramic bonded body, insulating circuit substrate, copper/ceramic bonded body production method, and insulating circuit substrate production method
A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.
BONDED BODY, INSULATED CIRCUIT BOARD WITH HEAT SINK, AND HEAT SINK
A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C.sub.0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C.sub.1 and a value obtained by subtracting the Mn solid solution concentration C.sub.1 from the Mn concentration C.sub.0 of the entire aluminum member is defined as an Mn precipitate concentration C.sub.2, a ratio C.sub.1/C.sub.2 of the Mn solid solution concentration C.sub.1 to the Mn precipitate concentration C.sub.2 is in a range of 0.1 or more and 2.7 or less.
Semiconductor substrate
A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.
Rotor assembly with multiple rotor disks
A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of disk mounts. The first rotor disk is configured to rotate about a rotational axis. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is mounted to the first rotor disk and to the second rotor disk. The rotor blades include a first rotor blade. Each of the disk mounts connects the first rotor disk and the second rotor disk together. The disk mounts include a first disk mount that further supports the first rotor blade.
BONDED BODY, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.
BONDED SUBSTRATE
Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.
Power module substrate and power module
A power module substrate includes an insulating substrate and a metal plate. The metal plate is joined to the insulating substrate with a brazing material in between. As to surface roughness of a lateral surface of the metal plate in a thickness direction, the surface roughness of at least a corner part farthest from a center of the metal plate in plan view is larger than the surface roughness of plane parts sandwiching the corner part.