A silicon nitride substrate includes silicon nitride and magnesium, in which when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the specific Condition I, XB/XA is 0.8 or more and 1.0 or less.

A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A sensor component for application temperatures above 700° C., especially electrical and/or electrochemical sensor component is provided. The sensor component has a feedthrough element, the feedthrough element having a through-hole with a through-hole inner wall extending from one surface of the feedthrough element to the other surface of the feedthrough element, wherein an insulation element is located within a through-hole of the feedthrough element, the through-hole has a diameter Da, the insulation element has a Volume V and a height H which are compact.

In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).