A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Provided are L-glufosinate intermediate preparation method or L-glufosinate preparation method, the method, for preparing L-glufosinate intermediate or L-glufosinate from an L-homoserine derivative, comprising a step of preparing a compound of Chemical Formula 2 from a compound of Chemical Formula 1.

The present application relates to an electrolyte, an electrochemical device and an electronic device comprising the same. The electrolyte of the present application includes a cyclic N-containing sulfonyl-compound and at least one of vinylene carbonate, fluoroethylene carbonate, lithium tetrafluoroborate, lithium difluoro(oxalato)borate or lithium difluorophosphate. The electrolyte of the present application may further include a sulfur-oxygen double bond containing compound and a silicon-containing carbonate. Compared with the prior art, using the electrolyte provided by the present application can effectively improve the high-temperature storage, cycle performance and overcharge performance of an electrochemical device, such as a lithium-ion battery.

Organosilicon quaternary ammonium compounds, their formulations, including powdered and solid formulations, and methods of use to treat infections in humans and animals.

The present invention relates to a process for the preparation of Apalutamide of formula (A) Apalutamide is a latest-generation androgen receptor inhibitor, used to treat non-metastatic castration-resistant prostate cancer. ##STR00001##

According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).
(R.sup.1).sub.aSi(H).sub.b(NH.sub.2).sub.4-a-b  [1]
(R.sup.2).sub.cSi(H).sub.dX.sub.4-c-d  [2]

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

The present invention provides processes for the synthesis of organic azides, intermediates for the production thereof, and compositions related thereto.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 100 C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.