The present invention relates to a process for the preparation of Apalutamide of formula (A) Apalutamide is a latest-generation androgen receptor inhibitor, used to treat non-metastatic castration-resistant prostate cancer.

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A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).

(R.sup.1).sub.aSi(H).sub.b(NH.sub.2).sub.4-a-b[1]

(R.sup.2).sub.cSi(H).sub.dX.sub.4-c-d[2]

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

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Disclosed is a nonaqueous secondary battery having a nonaqueous electrolyte containing a lithium salt dissolved in an organic solvent, in which the positive electrode active material is preferably a manganese-containing, lithium transition metal oxide salt. The nonaqueous electrolyte contains at least one compound of general formula (1), preferably at least one compound of general formula (1). The content of the compound of formula (1) or (1) in the nonaqueous electrolyte is preferably 0.001 to 10 mass %. The symbols in formulae (1) and (1) are as defined in the description.

The present application relates to an electrolyte, an electrochemical device and an electronic device comprising the same. The electrolyte of the present application includes a cyclic N-containing sulfonyl-compound and at least one of vinylene carbonate, fluoroethylene carbonate, lithium tetrafluoroborate, lithium difluoro(oxalato)borate or lithium difluorophosphate. The electrolyte of the present application may further include a sulfur-oxygen double bond containing compound and a silicon-containing carbonate. Compared with the prior art, using the electrolyte provided by the present application can effectively improve the high-temperature storage, cycle performance and overcharge performance of an electrochemical device, such as a lithium-ion battery.

An additive for a lithium secondary battery includes a compound represented by Formula 1 below, where R.sub.1 to R.sub.4 are as defined in the disclosure. An electrolyte for a lithium secondary battery includes: a lithium salt; a non-aqueous organic solvent; and the additive. A lithium secondary battery includes: a cathode; an anode; and the electrolyte.

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A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 400 C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

An additive for a lithium secondary battery includes a compound represented by Formula 1 below, where R.sub.1 to R.sub.4 are as defined in the disclosure. An electrolyte for a lithium secondary battery includes: a lithium salt; a non-aqueous organic solvent; and the additive. A lithium secondary battery includes: a cathode; an anode; and the electrolyte. ##STR00001##