C08F220/16

Resist composition and method of forming resist pattern

A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component including a polymeric compound containing a structural unit having an acid decomposable group, the amount of the structural unit having an acid decomposable group, based on the combined total of all structural units contained in the base component being 51 mol % to 59 mol %, and the structural unit having an acid decomposable group includes a structural unit represented by general formula (a1-1) shown below (in which R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Z represents a single bond or an alkyl group; and C.sub.p is a group represented by general formula (Cp-1) shown below). ##STR00001##

Resist composition and method of forming resist pattern

A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component including a polymeric compound containing a structural unit having an acid decomposable group, the amount of the structural unit having an acid decomposable group, based on the combined total of all structural units contained in the base component being 51 mol % to 59 mol %, and the structural unit having an acid decomposable group includes a structural unit represented by general formula (a1-1) shown below (in which R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Z represents a single bond or an alkyl group; and C.sub.p is a group represented by general formula (Cp-1) shown below). ##STR00001##

Photoresist composition and process for producing photoresist pattern

A photoresist composition comprising a resin which comprises a structural unit represented by the formula (I): ##STR00001## and a salt represented by the formula (B1): ##STR00002##

Photoresist composition and process for producing photoresist pattern

A photoresist composition comprising a resin which comprises a structural unit represented by the formula (I): ##STR00001## and a salt represented by the formula (B1): ##STR00002##

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND
20230280652 · 2023-09-07 · ·

A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R.sup.3 is an acid-dissociable group; and R.sup.41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of R.sup.f1 and R.sup.f2 is a fluorine atom or a fluoroalkyl group; R.sup.5a is a monovalent organic group having a cyclic structure; X.sub.1.sup.+ is a monovalent onium cation; R.sup.5b is a monovalent organic group, and X.sub.2.sup.+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

##STR00001##

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND
20230280652 · 2023-09-07 · ·

A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R.sup.3 is an acid-dissociable group; and R.sup.41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of R.sup.f1 and R.sup.f2 is a fluorine atom or a fluoroalkyl group; R.sup.5a is a monovalent organic group having a cyclic structure; X.sub.1.sup.+ is a monovalent onium cation; R.sup.5b is a monovalent organic group, and X.sub.2.sup.+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

##STR00001##

Cell culture substrate

The present invention is to provide a cell culture substrate including a block polymer including a segment having a lower critical solution temperature and a hydrophobic segment, the cell culture substrate further including an adhesive matrix, in which the adhesive matrix is an extracellular matrix and/or an adhesive synthetic matrix. Furthermore, the invention is to provide a cell culture substrate in which the extracellular matrix is at least one selected from laminin, fibronectin, vitronectin, cadherin, and fragments thereof, and/or the adhesive synthetic matrix is poly[2-(methacryloyloxy)ethyl dimethyl-(3-sulfopropyl) ammonium hydroxide] or an oligopeptide-carrying polymer.

Cell culture substrate

The present invention is to provide a cell culture substrate including a block polymer including a segment having a lower critical solution temperature and a hydrophobic segment, the cell culture substrate further including an adhesive matrix, in which the adhesive matrix is an extracellular matrix and/or an adhesive synthetic matrix. Furthermore, the invention is to provide a cell culture substrate in which the extracellular matrix is at least one selected from laminin, fibronectin, vitronectin, cadherin, and fragments thereof, and/or the adhesive synthetic matrix is poly[2-(methacryloyloxy)ethyl dimethyl-(3-sulfopropyl) ammonium hydroxide] or an oligopeptide-carrying polymer.

Iodonium salt, resist composition, and pattern forming process

A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

Iodonium salt, resist composition, and pattern forming process

A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.