Disclosed herein is a composite material suitable for inhibiting biofilm growth, the composite material comprising a substrate material and a random copolymeric material covalently bonded to a surface of the substrate material. The random copolymer contains repeating units having at least one functional group bearing a cationic charge and repeating units having at least one functional group bearing an anionic charge, where the repeating units are derived from compatible monomers that belong to different monomer classes having differing polymerisation kinetics. Specifically, the random copolymeric material is poly(AMPTMA-ran-SPM), wherein AMPTMA is (3-acrylamidopropyl) trimethylammonium chloride and SPM is 3-sulfopropyl methacrylate potassium. Also disclosed are methods of manufacturing said material and applications thereof.

A photoresist underlayer composition, comprising: a first polymer comprising a crosslinkable group; a second polymer comprising: a first repeating unit comprising a repeating unit comprising a photoacid generator, and a second repeating unit comprising a hydroxy-substituted C.sub.1-30 alkyl group, a hydroxy-substituted C.sub.3-30 cycloalkyl group, or a hydroxy-substituted C.sub.6-30 aryl group; an acid catalyst; and a solvent.

A photoresist underlayer composition, comprising: a first polymer comprising a crosslinkable group; a second polymer comprising: a first repeating unit comprising a repeating unit comprising a photoacid generator, and a second repeating unit comprising a hydroxy-substituted C.sub.1-30 alkyl group, a hydroxy-substituted C.sub.3-30 cycloalkyl group, or a hydroxy-substituted C.sub.6-30 aryl group; an acid catalyst; and a solvent.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of N-carbonylsulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.