A method for preparing dispersant using lignin degradation products includes preparation of lignin degradation products: degrading lignin which are used as raw materials using alkali through microwave-assisted activation at the presence of a metal oxide catalyst to obtain the lignin degradation products; and preparation of dispersant: preparing dispersant by molecularly reforming and chemically modifying the lignin degradation products obtained in the step of preparation of lignin degradation products.

The present invention relates generally to substrates for making polymers and methods for making polymers. The present invention also relates generally to polymers and devices comprising the same.

The present invention relates generally to substrates for making polymers and methods for making polymers. The present invention also relates generally to polymers and devices comprising the same.

This present invention relates to a chemically stable hollow spherical covalent organic framework having mesoporous walls with high surface area and a process for synthesis thereof. Further the immobilization and adsorption ability of the said COF's is disclosed in the present invention.

This present invention relates to a chemically stable hollow spherical covalent organic framework having mesoporous walls with high surface area and a process for synthesis thereof. Further the immobilization and adsorption ability of the said COF's is disclosed in the present invention.

This disclosure describes new compositions and methods related to photoresponsive poly(hexahydrotriazines) and related polymers.

An electrode for a battery cell, including an active material which contains silicon and which contains a first polymer which is ionically conductive. The active material contains in this case a copolymer, which includes the first polymer and a second polymer, the second polymer being electrically conductive. The A battery cell which includes at least one electrode is also described.

An electrode for a battery cell, including an active material which contains silicon and which contains a first polymer which is ionically conductive. The active material contains in this case a copolymer, which includes the first polymer and a second polymer, the second polymer being electrically conductive. The A battery cell which includes at least one electrode is also described.

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.