A battery cell formed of anode made from an n-type polymer and a cathode made from a p-type polymer with an electrolyte between the anode and the cathode. The anode and cathode are formed by depositing a compound that contains a non-volatile electrolyte that creates pathways in the deposited anode and the cathode. The n-type polymer and the p-type polymer are polymers that include a repeat unit of the following formula:

A battery cell formed of anode made from an n-type polymer and a cathode made from a p-type polymer with an electrolyte between the anode and the cathode. The anode and cathode are formed by depositing a compound that contains a non-volatile electrolyte that creates pathways in the deposited anode and the cathode. The n-type polymer and the p-type polymer are polymers that include a repeat unit of the following formula:

A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): ##STR00001##
a polymer containing a unit structure of the following Formula (2):
O—Ar.sub.1  Formula (2)
a polymer containing a structural unit of the following Formula (3):
O—Ar.sub.2—O—Ar.sub.3-T-Ar.sub.4  Formula (3)
a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): ##STR00001##
a polymer containing a unit structure of the following Formula (2):
O—Ar.sub.1  Formula (2)
a polymer containing a structural unit of the following Formula (3):
O—Ar.sub.2—O—Ar.sub.3-T-Ar.sub.4  Formula (3)
a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

The present invention relates to a method for preparing a covalent organic framework (COF) materials—a reversible polycondensation/termination method, the COF materials prepared by the method have high crystallinity, high specific surface area, regular and controllable morphology. The present invention also relates to a method for repairing defects of COF materials—reversible degradation-recombination, the method can eliminate defects of existing COF materials, thereby increasing the crystallinity and specific surface area of COF materials and improving their morphological characteristics.

The present invention relates to a method for preparing a covalent organic framework (COF) materials—a reversible polycondensation/termination method, the COF materials prepared by the method have high crystallinity, high specific surface area, regular and controllable morphology. The present invention also relates to a method for repairing defects of COF materials—reversible degradation-recombination, the method can eliminate defects of existing COF materials, thereby increasing the crystallinity and specific surface area of COF materials and improving their morphological characteristics.

A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

Disclosed is an ion exchange resin comprising a polymer having strong acid and strong base groups on the same polymer. In some forms the resin comprises a high density of polymers having strong acid and strong base groups on the same polymer. In some forms the strong acid and strong base groups are in close proximity to one another on the polymer. The disclosure further relates to a mixed bead resin for high salt level desalination.

##STR00001##

An object of the present invention is to provide a resist underlayer film forming composition for lithography that has features of having excellent smoothing performance on an uneven substrate, good embedding performance into a fine hole pattern, and a smoothed wafer surface after film formation, and the like. The object can be achieved by an underlayer film forming composition for lithography containing a compound having a protecting group.