An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P: ##STR00001##

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P: ##STR00001##

A composition containing a compound (A) containing a structure represented by the following general formula (I) as a first component, at least one of an antioxidant (B1) different from a phosphorus-based antioxidant and a light stabilizer (B2) as a second component, and a resin component (C) as a third component:

##STR00001##

wherein R.sup.1 and R.sup.2 each independently represent an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aryl group, or an aralkyl group; and R.sup.3 and R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aryl group, or an aralkyl group.

A polyether polymer composition containing 200 parts by weight or more of a metal-containing powder per a total of 100 parts by weight of a cationic group-containing low molecular weight polyether polymer composed of 10 to 200 oxirane monomer units, wherein at least a part of the oxirane monomer units is an oxirane monomer unit having a cationic group, and a high molecular weight polyether polymer composed of more than 200 oxirane monomer units is provided.

A polyether electrical-resistance adjusting agent of the present invention comprises a polymer that contains 10 to 60 mol % of a structural unit derived from an epihalohydrin (a), 30 to 89 mol % of a structural unit derived from an alkylene oxide (b), and 1 to 15 mol % of a structural unit derived from an ethylenically unsaturated group-containing monomer (c), and that has a weight-average molecular weight of 1,300,000 or less.

A polyether electrical-resistance adjusting agent of the present invention comprises a polymer that contains 10 to 60 mol % of a structural unit derived from an epihalohydrin (a), 30 to 89 mol % of a structural unit derived from an alkylene oxide (b), and 1 to 15 mol % of a structural unit derived from an ethylenically unsaturated group-containing monomer (c), and that has a weight-average molecular weight of 1,300,000 or less.

A highly damping homogenous elastomeric polymer blend. The elastomeric polymer blend comprises from about 50% to about 95 wt % epihalohydrin and from about 5% to about 50 wt % polymethylmethacrylate. The blend is homogenous and has a vertical rebound between 0 and about 10% and a Tg between about −20° C. and about 45° C. when measured by rheology.

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic compostion. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

##STR00001##

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic compostion. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

##STR00001##

The present invention aims to provide rubber compositions and tires which provide improved overall performance in terms of wet grip performance and dry grip performance. The present invention relates to a rubber composition having a hardness that reversibly changes with water and satisfying the following relationship (1):

Hardness when dry−Hardness when water-wet≥10   (1)

wherein each hardness represents the JIS-A hardness at 25° C. of the rubber composition.