A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Embodiments of the present disclosure provide a quantum dot ligand, a quantum dot material, and a quantum dot light emitting device. In a quantum dot ligand of general formula (I), n is 1, 2, 3, or 4; two of X, Y, and Z are G1 group and G2 group, respectively, and the remaining one is selected from the group consisting of G1 group, G2 group, and hydrogen, wherein the G1 group, for each occurrence, is independently selected from —(CH.sub.2).sub.m-L-(CH.sub.2).sub.n—R.sup.1, wherein R.sup.1 is a coordination group, m is 0 to 6, n is 0 to 6, and L is a divalent group or absent; the G2 group, for each occurrence, is independently selected from a C.sub.4-20 alkyl having a carbon chain with more than 4 carbon atoms.

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A composition of matter includes a core-shell quantum dot particle having an inorganic core and an organic shell and drilling fluid. A method includes introducing a core-shell quantum dot particle having an inorganic core and a polymer shell into a drilling fluid, circulating the drilling fluid through a well during a drilling operation that creates formation cuttings such that the core-shell quantum dot particle interacts with the formation cuttings, creating tagged cuttings, collecting returned cuttings from the circulating drilling fluid at a surface of the well, detecting the presence of the core-shell quantum dot particle on the returned cuttings to identify the tagged cuttings, and correlating the tagged cuttings with a drill depth in the well at a time during the drilling operation.

A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

A quantum dot device and an electronic device. The quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the second electrode and the light emitting layer and enhancing transport of first charge carriers from the second electrode to the light emitting layer, and a buffer layer disposed between the light emitting layer and the first charge auxiliary layer and enhancing extraction of second charge carriers from the light emitting layer.

The present invention relates to a semiconducting nanoparticle.

A method for obtaining at least one particle, including: (a) preparing solution A including at least one precursor of at least one of Si, B, P, Ge, As, Al, Fe, Ti, Zr, Ni, Zn, Ca, Na, Ba, K, Mg, Pb, Ag, V, Te, Mn, Ir, Sc, Nb, Sn, Ce, Be, Ta, S, Se, N, F, and Cl; (b) preparing aqueous solution B; (c) forming droplets of solution A; (d) forming droplets of solution B; (e) mixing droplets; (f) dispersing mixed droplets in a gas flow; (g) heating dispersed droplets to obtain the at least one particle; (h) cooling the at least one particle; and (i) separating and collecting the at least one particle. The aqueous solution is acidic, neutral, or basic. In step (a) and/or step (b) at least one colloidal suspension of a plurality of nanoparticles is mixed with the solution. Also, a device for implementing the method.

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated.

Furthermore, an agglomerate comprising a plurality of structures, an optoelectronic device as well as methods for producing a structure and an agglomerate are disclosed.

A structure, an optoelectronic device and a method for producing a structure are disclosed. In an embodiment, a structure comprises a first nanoparticle comprising at least one semiconductor material. The first nanoparticle is chromophoric in a first wavelength range and emissive in a second wavelength range. The structure further comprises a plurality of second nanoparticles. The second nanoparticles are non-chromophoric in the first wavelength range and in the second wavelength range.