The present invention relates to a composition comprising a nanoparticle.

A quantum dot including a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal, wherein the quantum dot includes a metal including indium and zinc, and a non-metal including phosphorus and sulfur, does not include cadmium, and has an optical density (OD) of about 0.4 to about 0.6 per 1 milligrams (mg) of the quantum dot for a wavelength of 450 nanometers (nm) and an emission peak wavelength of greater than or equal to about 500 nm and less than or equal to about 550 nm, and a volume of the core of greater than or equal to about 15% and less than or equal to about 50%, based on a total volume of the quantum dot.

A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio α (absorbance ratio α: A.sub.939/A.sub.1000-1150) of the absorbance at 939 cm.sup.−1 (A.sub.939) to the absorbance peak at 1000-1150 cm.sup.−1 (A.sub.1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Suggested is a semiconductor nano-sized light emitting material having a ligand.

Examples are disclosed that relate to an ultrafiltration system for quantum-dot (QD) purification. The ultrafiltration system comprises a pump having a low-pressure side and a high-pressure side, a size-exclusion membrane having a low-pressure side and a high-pressure side, and an inlet/outlet arrangement. An inlet arranged on the high-pressure side of the size-exclusion membrane is coupled fluidically to the high-pressure side of the pump. A product-enriched outlet is arranged on the high-pressure side of the size-exclusion membrane, fluidically downstream of the inlet. A product-depleted outlet is arranged on the low-pressure side of the size-exclusion membrane.

The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

The present invention provides a curable composition containing semiconductor nanoparticles, which contains luminescent semiconductor nanoparticles having good dispersibility and has low viscosity and excellent formability. Al curable composition containing semiconductor nanoparticles, contains: a monofunctional (meth)acrylate compound (a) having a tricyclodecane structure; at least one compound (h) selected from among (meth)acrylate compounds (b1) having two or more (meth)acryloyloxy groups and compounds (b2) represented by formula (1); a polymerization initiator (c); and luminescent semiconductor nanoparticles (d). H.sub.2C═C(R.sup.1)—CH.sub.2—O—CH.sub.2—C(R.sup.2)═CH.sub.2 (1) (In formula (1). R.sup.1 and R.sup.2 each independently represent a hydrogen atom,an alkyl group having 1 to 4 carbon atoms, or an organic group having 4 to 10 carbon atoms having an ester bond)