A semiconductor phosphor nanoparticle includes a semiconductor nanoparticle core containing a compound semiconductor, a shell layer coating the semiconductor nanoparticle core, and a modifying organic compound bonded to the shell layer through siloxane bonding. The modifying organic compound has an alkyl chain.

Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.

Provided are core-shell particles that have high luminous efficiency and are useful as quantum dots, a method for producing the same, and a film produced using the core-shell particles. The core-shell particles of the invention are core-shell particles having a core containing a Group III element and a Group V element; and a shell covering at least a portion of the surface of the core and containing a Group II element and a Group VI element, in which the proportion of the peak intensity ratio of the Group II element with respect to the peak intensity ratio of the Group III element as measured by X-ray photoelectron spectroscopy analysis is 0.25 or higher.

The invention relates to a self-passivating quantum dot and a preparation method thereof. The quantum dot is doped with a self-passivating element M and the self-passivating element M ranges from 0.1 wt % to 40 wt % in content. The self-passivating element is selected from the group consisting of Al, Zr, Fe, Ti, Cr, Ta, Si, and Ni. The preparation method comprises the steps of: adding a quantum dot core and a solvent into a reaction vessel, controlling the temperature to be 100-120 DEG C. and vacuumizing the reaction vessel for 30-50 min; filling the reaction vessel with inert gas, and rising the temperature to 230-280 DEG C.; and injecting a coating material precursor solution into the reaction vessel for coating the quantum dot core according to the injection amount being 1 or 2 times by molar concentration of the quantum dot core element per hour to prepare the self-passivating quantum dot. The self-passivating element M is doped with the quantum dot core precursor solution in the form of an M precursor, or is doped with the coating material precursor solution. Compared with the prior art, the self-passivating quantum dot has better appearance and is significantly improved in photostability.

Provided is a thin wavelength conversion film in which a phosphor can be uniformly dispersed and deterioration of the phosphor caused by oxygen can also be prevented; and a backlight unit including the wavelength conversion film. The wavelength conversion film includes a wavelength conversion layer and a substrate, in which the wavelength conversion layer includes a binder and particles including a phosphor, an oxygen permeability coefficient of the binder is 0.01 (cc.Math.mm)/(m.sup.2.Math.atm) or lower, an oxygen permeability coefficient of the matrix is 10 to 1000 (cc.Math.mm)/(m.sup.2.Math.day.Math.atm), and a content of the particles in the wavelength conversion layer is 3 to 30 vol %.

The present disclosure provides a quantum dot. The quantum dot includes a group III-V quantum dot core, and at least one type of halide ions, acetylacetonate ions, or hydroxyl ions bound to a surface of the group III-V quantum dot core, where the halide ions, the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core.

Disclosed is a composite particle including a plurality of nanoparticles encapsulated in an inorganic material, wherein the plurality of nanoparticles is uniformly dispersed in the inorganic material. Also disclosed is relates to a light emitting material, a support supporting at least one composite particle and/or a light emitting material and an optoelectronic device including at least one composite particle and/or a light emitting material.

Suggested is a semiconductor nano-sized light emitting material having a ligand.

Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.

General formula (1):

HS—X—(COOH)n  (1)

(In general formula (1), X is a (n+1)-valent hydrocarbon group, and n is a natural number of 1 to 3.) The present disclosure provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a dispersion medium having polarity while a high fluorescence quantum yield (QY) of the semiconductor nanoparticle is retained.

Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.