Patent classifications
C09K11/7734
PHOSPHOR, METHOD OF PRODUCING PHOSPHOR, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND IMAGE DISPLAY APPARATUS
A phosphor in which at least some of an element M in a phosphor host crystal represented by M.sub.α(L,A).sub.βX.sub.γ is substituted with Eu as an activation material. M represents one or more (including at least Sr) of Mg, Ca, Sr, Ba, and Zn, L represents one or more of Li, Na, and K, A represents one or more of Al, Ga, B, In, Sc, Y, La, and Si, X represents one or more (except that X represents only N) of O, N, F, and Cl, α, β, γ, and δ satisfy 8.70≤α+β+γ+δ≤9.30, 0.00<α≤1.30, 3.70≤β≤4.30, 3.70≤γ≤4.30, and 0.00<δ≤1.30. In a fluorescence spectrum obtained by irradiation with light having a wavelength of 260 nm, when a fluorescence intensity at a wavelength of 569 nm is represented by I.sub.0 and a fluorescence intensity at a wavelength of 617 nm is represented by I.sub.1, I.sub.1/I.sub.0 is 0.01 or more and 0.4 or less.
Strontium Aluminate Mixed Oxide and Method for Producing Same
The invention relates to a strontium aluminate mixed oxide precursor and a method for producing same, as well as to a strontium aluminate mixed oxide and method for producing same. The strontium aluminate mixed oxide precursor can be transformed into a strontium aluminate mixed oxide at relatively low temperature. The strontium aluminate mixed oxide is characterized by substantially spherically-shaped particles with a spongy- or porous bone-like microstructure. A luminescent material including a strontium aluminate mixed oxide is also provided.
BETA-SIALON PHOSPHOR PARTICLE AND LIGHT EMITTING DEVICE
A europium-doped β-sialon phosphor particle. When the element concentration of a Si atom on the surface portion of the particle that is obtained by analyzing a cross section of the phosphor particle by the energy dispersive X-ray analysis method is indicated by Ps [at %], and the element concentration of a Si atom near the center of the particle that is obtained by an analysis by the same method is indicated by Pc [at %], the Pc-Ps value is 3 at % or more.
METHOD OF PRODUCING BETA-SIALON FLUORESCENT MATERIAL
Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.
METHOD FOR TREATING A PLANT
The invention relates to a method for treating a plant wherein an agrochemical composition is applied onto at least one part of said plant, wherein the plant is corn or soy and wherein the agrochemical composition comprises in a liquid medium: particles of at least one inorganic phosphor exhibiting: a maximum in the emission spectrum in the range of wavelengths between 400 nm and 500 nm; an absorption Abs in the visible range which is equal to or less than 15.0%, preferably equal to or less than 10.0%, even more particularly equal to or less than 3.0%; and an internal quantum efficiency (IQE) measured in the range of wavelengths between 300 nm and 410 nm which is equal to or greater than 50.0%, more particularly greater than 75.0%, even more particularly greater than 90.0%;
and optionally at least one biocide.
Illumination device
To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
Phosphor and conversion LED
A phosphor may have the empirical formula: (AB).sub.1+x+2yAl.sub.11−x−y(AC).sub.xLi.sub.yO.sub.17:E, where 0<x+y<11; AC=Mg, Ca, Sr, Ba and/or Zn; AB=Na, K, Rb, and/or Cs; and E=Eu, Ce, Yb, and/or Mn. The phosphor may be used in conversion LED components.
Compositions for LED light conversions
Systems and methods to provide multiple channels of light to form a blended white light output, the systems and methods utilizing recipient luminophoric mediums to alter light provided by light emitting diodes. The predetermined blends of luminescent materials within the luminophoric mediums provide predetermined spectral power distributions in the white light output.
Wide color gamut light-emitting element
A light emitting element including a housing having a cavity and an inner wall, a light emitting part disposed in the cavity to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips spaced apart from each other, a lead portion to supply external electric power, and a wavelength converter including a first phosphor layer including a first phosphor to emit light having a peak wavelength in a green wavelength band, and a second phosphor layer including a second phosphor to emit light having a peak wavelength in a red wavelength band, in which the second phosphor includes at least one of a nitride-based red phosphor and a fluoride-based red phosphor represented by A.sub.2MF.sub.6:Mn.sup.4+, A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.
Light emitting device having recognizable amber color emission
A light emitting device includes: a light emitting element having a light emission peak wavelength in a range of 380 nm or more and 470 nm or less, and a wavelength conversion member disposed on a light emission side of the light emitting device and comprising: a fluorescent material layer containing a fluorescent material excited by light emitted from the light emitting device, having a light emission peak wavelength in a range of 500 nm or more and 780 nm or less, and a band-pass filter layer disposed on a light emission side of the fluorescent material layer.