The invention provides a method for providing luminescent particles (100) with a hybrid coating, the method comprising (i) providing a first coating layer (110) onto the luminescent particles (100) by application of a sol-gel coating process, thereby providing coated luminescent particles; and (ii) providing a second coating layer (120) onto the coated luminescent particles by application of an atomic layer deposition process. The invention also provides luminescent particles (100) comprise a luminescent core (102), a first coating layer (110) having a first coating layer thickness (d1) in the range of 50-300 nm, and a second coating layer (120) having a second coating layer thickness (d2) in the range of 5-250 nm.

A device including an LED light source optically coupled to a phosphor selected from [Y,Gd,Tb,La,Sm,Pr,Lu].sub.3[Al,Ga].sub.5−aO.sub.12−3/2a:Ce.sup.3+ (wherein 0<a<0.5), beta-SiAlON:Eu.sup.2+, [Sr,Ca,Ba][Al,Ga,In].sub.2S.sub.4:Eu.sup.2+, alpha-SiAlON doped with Eu.sup.2+ and/or Ce.sup.3+, Ca.sub.1−h−rCe.sub.hEu.sub.rAl.sub.1−h[Mg,Zn].sub.hSiN.sub.3, (where 0<h<0.2, 0<r<0.2), Sr(LiAl.sub.3N.sub.4):Eu.sup.2+, [Ca,Sr]S:Eu.sup.2+ or Ce.sup.3+, [Ba,Sr,Ca].sub.bSi.sub.gN.sub.m:Eu.sup.2+ (wherein 2b+4g=3m), quantum dot materials, and combinations thereof; and a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented.

A red-emitting phosphor comprising an Eu.sup.2+ doped nitridoaluminate phosphor is provided. The red emitting phosphor comprises an emission maximum in the range of 610 to 640 nm of the electromagnetic spectrum.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1-x*.sub.-y*.sub.-z*)Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

A quantum dot light emitting diode (LED) light source and a LED are provided. The quantum dot LED light source includes a light combining layer and a blue light chip, wherein the light combining layer is disposed above the blue light chip, the light combining layer includes a fluorescent powder and quantum dots, and a chemical composition of the fluorescent powder is SrLiAl.sub.3N.sub.4:Eu.sup.2+.

A phosphor including a fired product having a composition represented by general formula M.sup.1.sub.aM.sup.2.sub.bM.sup.3.sub.cAl.sub.3N.sub.4-dO.sub.d, wherein M.sup.1 is one or more elements selected from Sr, Mg, Ca, and Ba, M.sup.2 is one or more elements selected from Li, Na, and K, and M.sup.3 is one or more elements selected from Eu, Ce, and Mn, and wherein a, b, c, and d satisfy each of the following formulas: 0.850≤a≤1.150, 0.850≤b≤1.150, 0.001≤c≤0.010, 0.10<d≤0.20, and 0.09≤d/(a+d)<0.20.

A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr.sub.1-x, Ba.sub.x)LiAl.sub.3N.sub.4-nO.sub.n:Eu.sup.3+.sub.y, Eu.sup.2+.sub.z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.

Solution for use in filling micrometer-size cavities (10), the solution comprising a first solvent, a first polymer (102) having a first molecular weight, a second polymer (103) having a second molecular weight, luminophores (101) and a surfactant, the second molecular weight being 10 to 50 times greater than the first molecular weight.

Disclosed are a production method for a nitride fluorescent material, a nitride fluorescent material and a light emitting device. The production method is for producing a nitride fluorescent material that has, as a fluorescent material core, a calcined body having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al, and optionally Si, and N, and the method includes preparing a calcined body having the above-mentioned composition, bringing the calcined body into contact with a fluorine-containing substance, and subjecting it to a first heat treatment at a temperature of 100 C. or higher and 500 C. or lower to form a fluoride-containing first film on the calcined body, and forming on the calcined body, a second film that contains a metal oxide containing at least one metal element M2 selected from the group consisting of Si, Al, Ti, Zr, Sn and Zn and subjecting it to a second heat treatment at a temperature in a range of higher than 250 C. and 500 C. or lower.

An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na).sub.2(Si,Ti)F.sub.6:Mn.sup.4+ and a second red phosphor of the formula(M).sub.2-xEu.sub.xSi.sub.2Al.sub.2N.sub.6 where M=Sr, Ca, Ba, and/or Mg and 0.001x0.2, and wherein the optoelectronic device is configured to emit white total radiation.