A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A.sub.2MF.sub.6:Mn.sup.4+, A is one of Li, Na, K, Rb, Ce, and NH.sub.4, and M is one of Si, Ti, Nb, and Ta, and the Mn.sup.4+of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

The present invention relates to a fluorescent material and, more particularly, to an oxynitride fluorescent material, a method for preparing the same, and a light emitting device package using the same. The present invention can provide an oxynitride fluorescent material represented by chemical formula 1 below, wherein the ratio of M to A is 0.950-0.985:2 (M:A=0.950-0.985:2). MA.sub.2N.sub.2O.sub.2:R (in chemical formula 1 above, M is at least one element selected from Mg, Ca, Sr, and Ba; R, as an activator, is one of the rare-earth elements; and A is at least one element selected from Si and Ge).

Embodiments of the invention include a wavelength-converting material defined by AE.sub.3−x1−y+zRE.sub.3−x2+y−z[Si.sub.9-wAl.sub.w(N.sub.1−yC.sub.y).sup.[4](N.sub.16−z−wO.sub.z+w).sup.[12]]Eu.sub.x1,Ce.sub.x2, where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0≦x1≦0.18; 0≦x2≦0.2; x1+x2 >0; 0≦y≦1; 0≦z≦3; 0≦w≦3.

A core-shell fluorescent material and a light source device using the same are disclosed. The core-shell fluorescent material includes a core and a shell for generating an emitting light with wavelength within 520 and 800 nm after absorbing an exciting light with wavelength within 370 and 500 nm. The core may include yellow, green or red fluorescent powder, and the shell includes manganese (IV)-doped fluoride compound. The light source device generally includes the core-shell fluorescent material, a radiation source, leads and a package. The leads provide current to the radiation source and cause the radiation source to emit radiation. The core-shell fluorescent material is coated on the package for receiving the radiation so as to generate a high quality emission served as the desired light source for the field of lighting and displaying.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

A light-emitting system for healthy lighting, a light bar and a light fixture, wherein they are applied to the field of lighting and can emit white light with a color temperature range of 2700 K to 6500 K. A relative spectral power of the light-emitting system is set to be ϕ (λ), and a relative spectral power distribution of a solar spectral curve corresponding to the color temperature is set to be S (λ). The white light has a first characteristic waveband, and a wavelength region of the first characteristic waveband is 380-405 nm. The white light has a second characteristic waveband, and a wavelength region of the second characteristic waveband is 415-455 nm. The white light has a third characteristic waveband, and a wavelength region of the third characteristic waveband is 465-495 nm.

Disclosed is a light emitting lamp bead, in which a blue light missing portion is effectively filled by means of a chip excitation phosphor combination having the waveband of 400 nm-415 nm, and phosphors also has strong absorption for purple light, so that a light emitting diode (LED) device having high light emitting efficiency may be obtained. For the waveband of 420 nm-460 nm, a blue phosphor also achieves emission; however, because the phosphors have broad peak emission, the intensity is weak with respect to a blue light excitation position, so that the harm of blue light is reduced.

Provided is a phosphor which emits near-infrared light upon irradiation of visible light or ultraviolet light. A phosphor in an embodiment of the present invention includes an inorganic substance which contains at least an Eu element, an M[3] element (M[3] is at least one selected from the group consisting of Al, Y, La and Gd.), a Si element and nitrogen element, and also contains, if necessary, at least one element selected from the group consisting of M[1] element (M[1] is Li element.), an M[2] element (M[2] is at least one element selected from the group consisting of Mg, Ca, Ba and Sr.) and an oxygen element, while the phosphor has a maximum value of an emission peak at a wavelength in the range of 760 nm or more and 850 nm and less upon irradiation by an excitation source.

An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.