A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

The present invention provides a germanate luminescent material, a general molecular formula thereof being Zn.sub.2-2xGeO.sub.4:Mn.sub.2x,M.sub.y, wherein M is selected from at least one of Ag, Au, Pt, Pd, and Cu metal nano particles; 0<x0.05; M is doped in Zn.sub.2-2xGeO.sub.4:Mn.sub.2x, and y is a molar ratio of M to Zn.sub.2-2xGeO.sub.4:Mn.sub.2x, 0<y110.sup.2. The metal nano particle M is doped in a germanate luminescent substrate of the germanate luminescent material, and the metal nano particle M improves internal quantum efficiency of the luminescent material so that the germanate luminescent material has a high luminescent intensity. Also provided is a preparation method for the germanate luminescent material.