A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

A method of fabricating the organic-inorganic hybrid coating layer includes: preparing a gel mixture including an organic precursor and colloidal silica particles; preparing a first mixed solution by heating the gel mixture; preparing a second mixed solution by adding quantum dots to the first mixed solution; and coating the second mixed solution on a substrate and irradiating light thereon to form a polymer matrix in which the organic precursor and the colloidal silica particles are crosslinked, and preparing a coating layer in which the quantum dots are dispersed in the polymer matrix, wherein the organic precursor may include at least one of dipentaerythritol pentaacrylate (DPPA) or dipentaerythritol hexaacrylate (DPHA).

A quantum dot, a method of manufacturing the quantum dot, a composition including the quantum dot, an optical member including the quantum dot, and an electronic apparatus including the quantum dot are disclosed. The quantum dot includes: a nanomaterial; and a first ligand arranged on a surface of the nanomaterial, wherein the nanomaterial includes a core and a shell that covers at least a part of the core, wherein the first ligand includes a condensed polycyclic group in which two or more rings are condensed.

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

A display device can include a substrate including a display area, a subpixel positioned on the substrate and positioned in the display area, and a black bank positioned on the substrate. The black bank can include a first opening corresponding to an emission area of the subpixel, and quantum dots that absorb light having a wavelength in a visible light region. As a result, the display device can reduce external light reflectance.

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

A method for preparing fluorescent-encoded microspheres coated with metal nanoshells is disclosed herein. By using SPG method, metal nano-material modified with a certain ligand is used as a new surfactant in the emulsification process, and different kinds and different amounts of fluorescent materials are doped into polymer microspheres to prepare fluorescent-encoded microspheres with different fluorescent-encoded signals and uniformly coated metal nanoshells in one step. The prepared fluorescent-encoded microsphere comprises a metal nanoshell, a polymer, and a fluorescent-encoded material. The fluorescent-encoded microsphere has a particle size of 1 μm˜20 μm, CV of less than 10%, which can be used for protein/nucleic acid detection. The preparation method has the advantages of simple process, high surface coating rate, good uniformity and controllable LSPR peaks, which can solve the problems of existing commonly used metal nanoshell coating methods such as low surface coating rate, poor uniformity, complex preparation process and uncontrollable local surface plasmon resonance (LSPR) peaks, etc.