Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

An inorganic light emitting diode in which at least one energy control layer including an organometallic compound interacting with a hydroxyquinoline moiety is disposed between an emitting material layer and at least one charge transfer layer and an inorganic light emitting device including the diode are disclosed. An exciton recombination zone is formed at the central region in the EML, and inorganic luminescent particles have minimal surface defects by introducing the energy control layer. The inorganic light emitting diode and the inorganic light emitting device can improve their color purity and luminous efficiency.

A quantum dot material includes quantum dot particles and a first ligand bonded to a surface of the quantum dot particles. The first ligand is a metal-organic framework (MOF) monomer, and the MOF monomer includes at least three first active groups bonded to the quantum dot particles.

A quantum dot film includes a plurality of sealed microcells. The microcells may be formed within a layer of polymeric material and sealed with a sealing material. Also, the microcells may contain a dispersion of a solvent and a plurality of quantum dots. A method of making a quantum dot film includes providing a layer of polymeric material having a plurality of open microcells, filling the plurality of open microcells with a dispersion of a solvent and plurality of quantum dots, and sealing the microcells.

An electroluminescent device and a display device including the same are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; a light emitting layer including a first light emitting layer disposed on the hole transport layer, the first emitting layer including a first quantum dot, and a second light emitting layer including a second quantum dot and an n-type organic semiconductor, the second light emitting layer disposed on the first light emitting layer; an electron transport layer disposed on the second light emitting layer; and a second electrode disposed on the electron transport layer.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).