Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.

A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.

A curable resin composition containing quantum dots (A), a resin (B), a photopolymerizable compound (C), a photopolymerization initiator (D), an antioxidant (E), and a solvent (F), wherein a water content based on a total mass of the curable resin composition is 50 ppm or more and less than 5000 ppm.

There is provided a curable resin composition containing quantum dots (A), a resin (B), a photopolymerizable compound (C), and a photopolymerization initiator (D), in which the photopolymerization initiator (D) contains an oxime compound having a first molecular structure represented by the formula (1).

An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

Provided are a photosensitive resin composition having low viscosity and high compatibility prepared by providing a semiconductor nanoparticle-ligand composite comprising a ligand represented by Formula 1, an optical film having uniform and remarkably excellent quantum efficiency using the photosensitive resin composition, and an electroluminescent diode comprising the optical film and an electronic device comprising an electroluminescent diode.

An ink composition includes: a quantum dot including one or more ligands on a surface thereof; a first monomer including one or more epoxy groups; and a second monomer including one or more oxetane groups, wherein the one or more ligands include one or more polar moieties. An electronic apparatus includes a film formed utilizing the ink composition.

An ink composition including: a quantum dot including one or more ligands on a surface of the quantum dot; a first monomer including one or more epoxy groups; a second monomer including one or more oxetane groups; and a vinyl group-containing compound including one or more vinyl groups, wherein the one or more ligands include one or more polar moieties. Also provided is an electronic apparatus including a film formed using the ink composition, and a light emitting device.

An electroluminescent device includes a first electrode and a second electrode spaced apart from each other, and a light emitting layer including semiconductor nanoparticles. The semiconductor nanoparticles do not contain cadmium, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, the semiconductor nanoparticles have a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, the first semiconductor nanocrystals include a first zinc chalcogenide containing sulfur, in the semiconductor nanoparticles, a mole ratio of sulfur to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 110:1, and the semiconductor nanoparticles are configured to emit light having a maximum emission peak wavelength of greater than or equal to about 440 nanometers (nm) and less than or equal to about 580 nm, and the semiconductor nanoparticles have a quantum yield of greater than or equal to about 40%.

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising donor-acceptor ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.