In one aspect, a system for depositing a film on a substrate is disclosed, which comprises at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive species. The system further includes an inner cooling cylinder and a substrate cylinder, where the inner cooling cylinder is fixedly positioned relative to the substrate cylinder, and the substrate cylinder at least partially surrounds the inner cooling cylinder. At least one mount is coupled to the substrate cylinder for mounting one or more substrates to the substrate cylinder.

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.

The invention relates to a method for producing substrates having a plasma coated surface made of a dielectric coating material in a vacuum chamber, having an AC-powered plasma device, comprising moving a substrate relative to the plasma device by means of a movement device along a curve, and depositing coating material on a surface of the substrate in a coating region along a trajectory lying on the surface of the substrate using the plasma device.

The invention relates to the deposition of optical precision films with high uniformity, precision, particle freedom and low absorption on the substrate. For this purpose, a method and a device are proposed. The approach is the use of target materials and also possibly of surfaces in the sputtering field. Particularly high uniformity and also particularly low residual absorption are achieved with these materials. The invention is suitable for the production of optical thin-film filters, as are used for example in laser material machining, laser components, optical sensors for measuring technology, or in medical diagnostics.

A method for forming a film on a flexible substrate by vapor deposition is provided, wherein the method is capable of reducing in size of the entire apparatus and improving an efficiency to thereby enhance productivity. A film formation method includes the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

In one aspect, a system of depositing a film on a substrate is disclosed, which includes at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive ionic species. The system further includes a pair of inner and outer concentric cylinders, where the outer cylinder has first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders. At least one mount is coupled to the inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with the inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two regions so as to expose the substrate alternatingly to said metal atoms and said reactive ionic species. Further, the outer cylinder includes at least one cooling channel through which a cooling fluid can flow for maintaining the inner surface of the outer cylinder at a temperature suitable for radiative cooling of the substrate.

The invention relates to apparatus and a method for depositing material onto substrates, particularly optical substrates, to form a coating thereon. The apparatus and method incorporates the use of a series of magnetrons provided to be controlled to sputter deposit material provided in targets mounted therein, on to the substrates. There is provided a voltage to the magnetrons to operate the same and the level of voltage which is required to form required coating or coating layer characteristics is determined by using monitoring apparatus, at least when forming the coating or coating layer for the first time. The appropriate voltage level data for operation of the magnetrons can be held in a database and subsequently used to control the voltage level when forming an identified coating or layers of coatings.

A film forming apparatus includes: a rotary table provided in a chamber; a processing unit configured to perform plasma processing on a workpiece transferred by the rotary table; an inner wall configured to define a processing space and having an opening facing the rotary table; an outer wall configured to cover a periphery of the inner wall with a gap, and configured to form an exhaust space having an opening facing the rotary table; and an exhaust port connected to an exhaust device, wherein the processing unit is a film forming part configured to form a film by sputtering, and wherein both ends of the outer wall are in contact with a side surface of the chamber, and a portion of an outer periphery of the inner wall and the side surface of the chamber are partitioned, so that a reaction gas does not circulate in the exhaust space.