A new titanium-based implant is disclosed, which is formed by a titanium coating manufactured with biomaterials with applications in osseous implantology. The nanotopographical characteristics of these implants inhibit bacterial adhesion and the formation of a bacterial biofilm on the surface, whilst simultaneously presenting suitable properties for the adhesion, stretching and proliferation of bone-forming cells. Moreover, the invention comprises a method for manufacturing the implant by means of oblique-incidence techniques and the use thereof in osseous implantology.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

Disclosed is method for plating a PVD (physical vapor deposition) germ killing film, employing a vacuum magnetron sputtering technology and using a nano-silver-containing target for uniformly distributing nano-silver to form a germ killing film. The method can achieve the aim of full germ killing. Besides, nano-silver is enveloped in the sputtering target to form the film, so the target material target can play the role of protecting the nano-silver. Target material can be Al, Cr, stainless steel and Cu. Therefore, the nano-silver is protected; wear resistance of the germ killing film is increased; and the germ killing film can continuously kills germs for a long time.

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

The invention relates to the method of forming a platinum-based catalytic coating on electrodes for using in electrochemical devices such as fuel cells or electrolysis cells. According to the invention, to produce a platinum-based catalyst, the carrier is preliminary cleaned by ion etching and the catalytic coating is applied onto the cleaned surface from at least one target based on platinum in vacuum in the primary gas plasma with addition of reactive gas, sputtering being done at the power density on the magnetron sputtered target within (0.004-0.17)*10.sup.5 W/m.sup.2 and the ratio of concentrations of the primary and reaction gas of 75-99%. Technical result: increased specific catalytic activity of the electrode's catalytic coating for electrochemical devices (fuel cells and electrolysis cells). 2 primary claims, 8 depending claims, 5 figures.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer,

According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.

A structure of assembly grasp for palladium-alloy tubes and the manufacturing method thereof are described. The structure of assembly grasp for palladium-alloy tubes includes a grasp with a plurality of holes, a plurality of palladium-alloy tubes inserted into the plurality of holes, and an intermetallic compound layer between the palladium-alloy tubes and the inner sidewalls of the plurality of holes.

Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 μm or less, and a crystal grain size range is 5 to 200 μm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.

The present invention relates to a method for producing a neutron converter from boron carbide or a boron film on a neutron transparent metal substrate. The neutron transparent metal substrate is polished in a first step by fine grinding and coated in a further step by means of sputtering with boron carbide or a boron film. An adhesion promoting layer is optionally applied between the metal substrate and below the boron or boron carbide layer. The coatings obtained have a high homogeneity in layer thickness, chemical composition and isotope ratio as well as a low level of impurities such as oxygen or nitrogen.