CERAMIC COMBO LID WITH SELECTIVE AND EDGE METALLIZATIONS
20170229360 · 2017-08-10
Inventors
Cpc classification
H01L23/08
ELECTRICITY
H01L23/06
ELECTRICITY
B32B15/01
PERFORMING OPERATIONS; TRANSPORTING
B23K31/02
PERFORMING OPERATIONS; TRANSPORTING
H01L23/04
ELECTRICITY
H01L21/4803
ELECTRICITY
H01L23/10
ELECTRICITY
B23K1/0016
PERFORMING OPERATIONS; TRANSPORTING
B23K1/20
PERFORMING OPERATIONS; TRANSPORTING
International classification
H01L23/06
ELECTRICITY
H01L23/08
ELECTRICITY
C23C14/16
CHEMISTRY; METALLURGY
B32B15/01
PERFORMING OPERATIONS; TRANSPORTING
H01L23/04
ELECTRICITY
H01L21/48
ELECTRICITY
Abstract
A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.
Claims
1. A frame lid comprising: a plate comprising a top surface, a bottom surface, and a sidewall joining the top surface and the bottom surface together; a seal ring on a peripheral area of the top surface and the sidewall of the plate, and a solder preform attached to the seal ring on the peripheral area.
2. The frame lid of claim 1, wherein the plate is made from beryllium-copper, molybdenum, bronze, glass, an iron-nickel-cobalt alloy, or a ceramic selected from the group consisting of alumina (Al.sub.2O.sub.3), beryllia (BeO), aluminum nitride (AlN), zirconia toughened alumina (ZTA), SiC, and Si.sub.3N.sub.4.
3. The frame lid of claim 1, wherein the seal ring is formed from a metal selected from the group consisting of silver, palladium, platinum, nickel, gold, titanium, tungsten-copper-nickel, palladium-gold-tin, and alloys thereof.
4. The frame lid of claim 1, wherein the solder preform is formed from a gold-tin alloy, a lead-based alloy, or a lead-free alloy.
5. The frame lid of claim 1, wherein the top surface and the bottom surface are parallel.
6. The frame lid of claim 1, wherein the plate has a thickness of about 0.5 millimeters to about 1 millimeter.
7. The frame lid of claim 1, wherein the plate is formed from a non-magnetic material.
8. The frame lid of claim 1, wherein the seal ring on the peripheral area has a width of about 0.5 millimeters to about 1 millimeter.
9. The frame lid of claim 1, wherein the seal ring on the peripheral area has a thickness of about 1 micrometer to about 40 micrometers.
10. The frame lid of claim 1, wherein the peripheral area is from about 20% to about 35% of the surface area of the top surface of the plate.
11. The frame lid of claim 1, wherein the solder preform has a melting temperature of from about 200° C. to about 350° C.
12. The frame lid of claim 1, wherein the solder preform has a width of from about 0.3 millimeters to about 0.6 millimeters.
13. The frame lid of claim 1, wherein the solder preform is tack welded to the seal ring.
14. A frame lid for a semiconductor package comprising: a substrate; and at least one layer of metal applied to the substrate via sputter deposition.
15. The frame lid for a semiconductor package of claim 14, wherein the layer of metal applied to the substrate via sputter deposition has a thickness of about 1 micrometer to about 10 micrometers.
16. The frame lid for a semiconductor package of claim 14, wherein the metal applied to the substrate via sputter deposition has a thickness of about 1 micrometer to about 40 micrometers.
17. The frame lid for a semiconductor package of claim 14, wherein there are two layers of metal applied to the substrate via sputter deposition.
18. The frame lid for a semiconductor package of claim 14, wherein there are three layers of metal applied to the substrate via sputter deposition.
19. The frame lid for a semiconductor package of claim 14, wherein a nickel sublayer and a gold sublayer are applied to the substrate via sputter deposition.
20. The frame lid for a semiconductor package of claim 14, wherein: the nickel sublayer is applied to the substrate via sputter deposition; and, the gold sublayer is applied via sputter deposition over the nickel sublayer.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The following is a brief description of the drawings, which are presented for the purposes of illustrating the exemplary embodiments disclosed herein and not for the purposes of limiting the same.
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DETAILED DESCRIPTION
[0029] A more complete understanding of the components, processes, and apparatuses disclosed herein can be obtained by reference to the accompanying drawings. These figures are merely schematic representations based on convenience and the ease of demonstrating the present disclosure, and are, therefore, not intended to indicate relative size and dimensions of the device or components thereof and/or to define or limit the scope of the exemplary embodiments.
[0030] Although specific terms are used in the following description for the sake of clarity, these terms are intended to refer only to the particular structure of the embodiments selected for illustration in the drawings, and are not intended to define or limit the scope of the disclosure. In the drawings and the following description below, it is to be understood that like numeric designations refer to components of like function.
[0031] The singular forms “a,” “an,” and “the” include plural referents unless the context clearly dictates otherwise.
[0032] Numerical values in the specification and claims of this application should be understood to include numerical values which are the same when reduced to the same number of significant figures and numerical values which differ from the stated value by less than the experimental error of conventional measurement technique of the type described in the present application to determine the value.
[0033] All ranges disclosed herein are inclusive of the recited endpoint and independently combinable (for example, the range of “from 2 grams to 10 grams” is inclusive of the endpoints, 2 grams and 10 grams, and all the intermediate values).
[0034] The term “about” can be used to include any numerical value that can carry without changing the basic function of that value. When used with a range, “about” also discloses the range defined by the absolute values of the two endpoints, e.g., “about 2 to about 4” also discloses the range “from 2 to 4.” The term “about” may refer to plus or minus 10% of the indicated number.
[0035] Initially, a hermetically sealable electronic package is illustrated in
[0036] The electronic package 100 is formed from an insulating base 110, a solder preform 120, and a lid 130. The base is shaped to include a cavity 112 in which an electronic component (e.g. a semiconductor) is mounted. Not shown here are various leads and vias which may be included with the base. The periphery of the base includes a raised wall 114. When heated, the solder preform melts and fuses the lid to the raised wall of the base.
[0037]
[0038] In
[0039] In
[0040] The present disclosure provides methods of making a frame lid that reduces these events from occurring. Briefly, a metallic mask is used to cover the central area of the surface of a plate. A seal ring is then formed by metallizing the peripheral area of the surface and the sidewall of the plate as well to form one continuous layer. This improves yield, seal strength, and also provides visual assurance to end users. A solder preform is then tack welded to the seal ring.
[0041] Initially,
[0042] The plate 600 is made from a non-metallic material. Exemplary non-metallic materials include beryllium-copper, molybdenum, bronze, glass, an iron-nickel-cobalt alloy (e.g. KOVAR™), an iron-nickel binary alloy (e.g. Alloy 42), or a ceramic selected from the group consisting of alumina (Al2O3), beryllia (BeO), aluminum nitride (AlN), zirconia toughened alumina (ZTA), SiC, and Si3N4. The plate has a thickness 605 (measured between the top surface and the bottom surface) of about 0.5 millimeters (mm) to about 1 millimeter. In particular embodiments, the plate is made from a non-magnetic material. This may be useful in certain applications where electrical signals/noise can interfere with the electronic component in the package, e.g. in medical imaging applications.
[0043] Next, as illustrated in
[0044] Next, as illustrated in
[0045] Another approach is to use a thin film process to create a “seed” layer, then up-plate the seed layer to a thicker metal layer by an electrolytic or electroless process. The seed layer should not contain any organic contents.
[0046] In some desirable embodiments, the seal ring can be formed from a set of sublayers. In such embodiments, there may be two sublayers or three sublayers. For example, the seal ring can be formed by sputtering a first sublayer on the top surface or the sidewall of the plate. Next, a second sublayer can be sputtered to the top surface or sidewall of the plate, the second sublayer applied over the first sublayer. In specific embodiments, a nickel sublayer can be laid down first, then a gold sublayer can be laid down over the nickel sublayer. The nickel sublayer serves as a barrier to corrosion, while the gold sublayer provides a readily solderable surface which ensures a clean particulate-free surface. Each sublayer may have a thickness/depth of 0.001 mm to 0.01 mm (i.e. 1 μm to 10 μm). The seal ring may have a thickness/depth of 0.001 mm to 0.04 mm (i.e. 1 μm to 40 μm).
[0047]
[0048] Next, as illustrated in
[0049] Not illustrated is the removal of the metal mask 630 from the central area of the plate. The metal mask is removed from the plate after the metallizing that forms the seal ring. However, the metal mask could be removed either before or after the connecting of the solder preform, as desired. The central area of the top surface of the final frame lid is thus not metallized; rather the top surface is visible in the central area. After removing the metal mask 630 from the plate, the mask can be reused on a different plate, if desired.
[0050]
[0051] Many advantages accrue in the presently-described methods. In particular, shrinkage of the seal ring is eliminated. There is a reduction of outgassing during metallization, which prolongs the shelf life of the frame lid, and also improves seal integrity. Any type of solder can be attached to the seal ring. Solder optimization reduces PIND failures as well. The lead time is also improved.
[0052] The present disclosure has been described with reference to exemplary embodiments. Obviously, modifications and alterations will occur to others upon reading and understanding the preceding detailed description. It is intended that the present disclosure be construed as including all such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.