A nano scale robotic system for single cell DNA sequencing of a strand of DNA positioned on a slide utilizes an atomic force microscope (AFM) having an end effector in the form of a cantilever with a tip. The AFM causes its cantilever tip to scan over the base pairs of the DNA strand. A pair of spaced-apart electrodes at the tip makes contact with opposite sides of the DNA strand and the current between bases of the DNA strand is measured by a current measurement system connected to the electrodes. An artificial intelligence-based data analytic system determines the DNA sequence based on the current from the current measuring system. The AFM tip is guided over the DNA strand by comparing compressed desired intensity local scan images and compressed actual intensity local scan images and using the difference to control the location of the tip.

A method of making a multi-walled carbon nanotubes (MWCNTs) electrode is a deposition-based method for growing MWCNTs on copper (Cu) foils to make binder-free electrodes for energy storage devices, such as those used in batteries and supercapacitors. A chromium layer is sputter coated on a copper foil substrate, and a nickel catalyst layer is sputter coated on the chromium layer, such that the chromium layer forms an electrically conductive barrier layer between the nickel catalyst layer and the copper foil substrate. The multi-walled carbon nanotubes are then formed on the copper foil substrate using plasma enhanced chemical vapor deposition.

Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.

A method for fabricating a substrate provided with a plurality of layers, includes: providing a steel substrate with an oxide layer including metal oxides on the steel substrate; providing a metal coating layer directly on the oxide layer, the metal coating layer including: at least 8% by weight nickel; at least 10% by weight chromium; and a remainder being iron and impurities from a fabrication process; and providing an anti-corrosion coating layer directly on the metal coating layer.

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

A method for forming a layer of alumina on the surface of a metal alloy substrate including aluminium, includes depositing a first aluminium layer on a surface of the metallic substrate, depositing a second layer by vapour-phase deposition on the first layer, the second layer comprising aluminium, a halogen and oxygen, and heat treatment of the substrate coated with the first and second layers under oxidising atmosphere in order to form the layer of alumina at the surface of the metallic substrate.

A high-entropy alloy film, the composition of which includes titanium, zirconium, niobium, tantalum and iron. The high-entropy alloy film is made with a combination of elements with high biocompatibility, and its formation of non-crystalline structure is further improved by adding iron. Furthermore, as the content of titanium in the high-entropy alloy film is adjusted, the microstructure, mechanical properties, and corrosion resistance of the high-entropy alloy film is changed as well.

Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.