A composite nanoarchitecture unit is disclosed. The unit comprises a columnar film grown on top of another layer where the columns touch each other at the top forming arches having optimized characteristics. This nanoarchitecture unit, called nano-vault, achieves high mechanical stability for films under strong and variable stress action.

A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb.sub.2O.sub.5 as a metal oxide component.

A field device for processing and automation technology includes a first and a second component that can each be mechanically connected at a joining surface by means of a joining point. Two metal surface layers are each applied at least to the joining surface of the first component and the joining surface of the second component. The metal of the surface layers is different from the metal of the first and/or the metal of the second component. A joining material is applied between the respective joining surfaces of the two components, wherein the joining material includes particles at least partially consisting of a metal that corresponds with the metal of the surface layers The joining of the two components occurs at a joining temperature below 300° C.

A coated substrate for an electronic device can include a substrate, a physical vapor deposition layer over the substrate, and an anti-fingerprint layer over the physical vapor deposition layer. The physical vapor deposition layer can include an alloy of gold and platinum. The anti-fingerprint layer can include an ultraviolet radiation-cured polymer mixed with an anti-fingerprint material. The anti-fingerprint material can include a silane, a fluorinated polymer, a hydrophobic polymer, or a combination thereof.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

The present invention provides a method for manufacturing a thin film foil, wherein a metal thin film layer is formed on a base substrate through a vacuum deposition process to form an ultra-thin film foil having a thickness of 5 μm or less, preferably 2 μm or less. The provided method for manufacturing a thin film foil comprises the steps of: preparing a base substrate having release properties; preparing a metal raw material; vacuum-depositing the metal raw material on the base substrate to form a metal layer on the base substrate; and separating the base substrate from the metal layer to form a thin film foil, wherein one of a BeCu alloy, a Cu—Ag—Cr ternary alloy, an Ag alloy, a CuMo alloy, and a CuFeP alloy is prepared as the metal raw material.

A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

The present disclosure is generally related to methods, systems and devices for forming a randomized grain structure coating on a substrate of a component for use in a nuclear reactor to provide protection against corrosion and, more particularly, is directed to improved methods, systems and devices for forming a randomized grain structure coating on a zirconium alloy nuclear fuel cladding tube using a cathodic arc (CA) physical vapor deposition (PVD) process to provide protection against corrosion in both normal operation and in transient and accidents of the nuclear reactor.