Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm.sup.2; and the yttrium ingot has a relative density of greater than or equal to 96%.

A sputtering target comprising a top coat including a composition of lithium cobalt oxide LiyCozOx. x is smaller than or equal to y+z, and the lithium cobalt oxide has an X-Ray diffraction pattern with a peak P2 at 44°±0.2° 2-theta. The X-Ray diffraction pattern is measured with an X-Ray diffractometer with CuKα1 radiation.

Tantalum powder that is highly spherical is described. The tantalum powder can be useful in additive manufacturing and other uses. Methods to make the tantalum powder are further described as well as methods to utilize the tantalum powder in additive manufacturing processes. Resulting products and articles using the tantalum powder are further described.

An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.

A sputtering target comprising a target insert comprising a target metal compound and a skirt structure including a primary skirt and a secondary skirt. The primary skirt is disposed adjacent least a portion of a secondary skirt and comprises a first metal compound. The secondary skirt comprises a second metal compound that is different from the first metal compound.

An oxide semiconductor sputtering target used in a sputtering process to deposit an active layer of a TFT. The oxide semiconductor sputtering target is formed from a material based on a composition of In, Sn, Ga, Zn, and O. The material contains gallium oxide, tin oxide, zinc oxide, and indium oxide. The In, Sn, Ga, and Zn contents are in ranges of 60% to 80%, 0.5% to 8%, 5% to 15%, and 10% to 30% by weight with respect to the weight of In+Sn+Ga+Zn, respectively. A method of fabricating a TFT includes depositing an active layer using the oxide semiconductor sputtering target. Such a TFT is used in a liquid crystal display (LCD), an organic light-emitting display, an electroluminescence display, and the like.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. In certain embodiments, the device includes a counter electrode having an anodically coloring electrochromic material in combination with an additive.

A nickel alloy sputtering target comprises: a nickel alloy containing an element capable of decreasing the Curie temperature of nickel, wherein an area ratio of a Ni phase having a Ni content of 99.0 mass % or more is 13% or less and an average crystal grain diameter is 100 gm or less. It is preferred that an area ratio of a high-purity Ni phase having a Ni content of 99.5 mass % or more be 5% or less.

Provided is a sputtering target to be used for forming a granular magnetic thin film in which FePt magnetic grains are isolated by an oxide and which constitutes a heat-assisted magnetic recording medium having enhanced uniaxial magnetic anisotropy, thermal stability, and SNR (signal-to-noise ratio).

The sputtering target for a heat-assisted magnetic recording medium contains an FePt alloy and a nonmagnetic material as main components, where the nonmagnetic material is an oxide having a melting point of 800° C. or higher and 1100° C. or lower.

Ternary and quaternary shape memory alloys, particularly nickel-titanium based quaternary and quaternary shape memory alloys, are disclosed and made by a method employing physical vapor deposition (PVD), such as by sputtering, of NiTiX, wherein X is a ternary metal constituent. By employing PVD processing, ternary and quaternary NiTi alloy bulk materials may be made in in the as-deposited state such that the configuration and conformation of a desired precursor material, e.g., wires, tubes, planar materials, curvilinear, or as the near finished end product, such as a hypotube for stent manufacture, semilunar for cardiac valves or conical for embolic or caval filters, is formed on a removable deposition substrate in the configuration and conformation of the precursor material or near-finished end product.