A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Provided herein are methods for the controlled, independent modification of the surface of polymer-based materials and compositions generated thereby. The methods include use of low temperature plasma for surface modification. The methods allow for the alteration of multiple surface characteristics including generation of precise nanostructures, morphology, crystallography and chemical composition for increased biocompatibility, for example, hydrophilicity, steric hindrance, anti-inflammatory properties and/or anti-bacterial properties.

A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.

A method includes providing a substrate, where the substrate has a patterned substrate surface, wherein the patterned substrate surface comprises a first surface region and a second surface region. The method may also include directing a depositing species to the patterned substrate surface; and directing angled ions to the patterned substrate surface, wherein the depositing species forms a deposit on the first surface region and does not form a deposit on the second surface region.

A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

The present invention relates to a substrate including plasmonic continuous film with curved surface and a method for manufacturing the same. More particularly, the present invention relates to a substrate for an ultrasensitive spectroscopic sensor, which includes bowl-shaped plasmonic curved nanodimples and spiked plasmonic nanotips formed at contact points between the nanodimples at the same time, thereby greatly increasing the total volume of hotspots and being capable of concentrating and analyzing an extremely small amount of a sample, and a method for manufacturing the same.

A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

A single beam plasma or ion source apparatus is provided. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. A further aspect of an ion source includes magnets and/or magnetic shunts which create a magnetic flux with a central dip or outward undulation located in an open space within a plasma source. In another aspect, an ion source includes a removeable cap attached to an anode body which surrounds the magnets. Yet a further aspect provides a single beam plasma source which generates ions simultaneously with target sputtering and at the same internal pressure.