Provided is a transparent structure having improved wear resistance and flexibility, and a structure according to the present invention is a nanolayered structure in which a nitride nanofilm of one or more elements selected from metals and metalloids; and a boron nitride nanofilm are alternately layered.

Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a first gas at a first flow rate to a substrate support disposed within an interior volume of a deposition chamber and at a second flow rate into the interior volume of the deposition chamber; decreasing the first flow rate of the first gas to a third flow rate; supplying DC power or DC power and an AC power for inducing an AC bias therebetween; supplying a second gas into the deposition chamber in a switching mode while supplying the first gas at the second flow rate and the third flow rate and increasing at least one of the DC power or AC power to increase the AC bias; and while supplying the second gas in the switching mode, depositing material from the target onto a substrate to form a barrier layer.

A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

The invention relates to a method for ablating a material (1) from a material unit (502) and for arranging the material (1) on an object (125), the object (125) being arranged in a particle beam apparatus. Further, the invention relates to a computer program product, and to a particle beam apparatus for carrying out the method. The method comprises feeding a particle beam with charged particles onto the material (1), wherein the material (1) is arranged on the material unit (502) and/or wherein the material unit (502) is formed from the material (1), wherein the material (1) is ablatable from the material unit (502) and wherein the material (1) is arranged on the material unit (502) at a distance from the object (125).

Further, the method comprises ablating the ablatable material (1) arranged on the material unit (502) from the material unit (502) using the particle beam, and arranging the ablated material (514) on the object (125).

A method of depositing an AlN thin film according to an embodiment of the disclosure comprises: a step of forming an insulating layer on a base substrate; and a step of depositing an AlN thin film on the insulating layer through a sputtering process, wherein the step of depositing the AlN thin film is performed through a continuous deposition type, at lower than a CMOS-compatible process temperature and in a state of applying a bias positive voltage to the base substrate such that the AlN thin film has an adjustable deposition thickness. Therefore, an embodiment of the disclosure is advantageous in that an AlN thin film having excellent piezo characteristics can be obtained at a low process temperature compatible with a CMOS process.

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

A method of forming a layer of a cathode is provided. The method includes generating a plasma remote from one or more sputter targets, sputtering material from the target or targets using the plasma, and depositing the sputtered material on the substrate to which a bias voltage has been applied, thereby forming the layer of cathode.

Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

A method for preparing a super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film is provided. A substrate is ultrasonically cleaned in absolute ethyl alcohol and acetone sequentially for 15 min. The substrate is cleaned by argon plasma bombardment for 15 min. A fullerene-like carbon layer A having an onion-like structure is prepared by high-vacuum medium-frequency magnetron sputtering for 30 s. A graphene-like boron nitride layer B is prepared by high-vacuum medium-frequency magnetron sputtering and coating device to sputter the elemental boron target for 30 s. Steps (3) and (4) are repeated 80 times to overlay the fullerene-like carbon layer A and the graphene-like boron nitride layer B in an alternate way. The super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film has a large load capacity, and excellent wear resistance, high temperature resistance and super lubrication.