A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850 C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450 C. to about 800 C. at a rate of temperature increase of from about 2 C./minute to about 30 C./minute; and maintaining the nanocrystalline material at the temperature of from about 450 C. to about 800 C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.

A sputtering apparatus includes: a chamber; a target disposed inside the chamber; a coil disposed adjacent to the target; a moving member on which the coil is disposed, where the moving member adjusts a position of the coil; and a coil shield disposed inside the chamber to overlap the coil. An opening is defined in the coil shield.

The present inventive concept relates to a deposition system including: a deposition device having a chamber, a seating plate located inside the chamber to seat a wafer, a magnet coupled to the underside of the seating plate, and a mask assembly located inside the chamber; and a transfer device having a load lock chamber for accommodating the wafer, an arm member for transferring the wafer from the load lock chamber to the seating plate, and a fourth driving module for moving the arm member, wherein the deposition device includes a first driving module for moving the magnet and the seating plate, a second driving module coupled to the first driving module to move the magnet, a third driving module for moving the wafer, and a control module for controlling the first driving module, the second driving module, the third driving module, and the fourth driving module.

Certain examples described herein relate to a sputter deposition apparatus including a guiding member to guide a substrate in a conveyance direction, a plasma source to generate a plasma, and a magnet arrangement. The magnet arrangement is configured to confine the plasma within the apparatus to a pre-treatment zone, within which the substrate is exposed to the plasma in use. The magnet arrangement is also configured to confine the plasma within the apparatus to a sputter deposition zone, located after the pre-treatment zone in the conveyance direction, to provide for sputter deposition of a target material to the substrate in use. The pre-treatment and sputter deposition zones are disposed about the guiding member.

A cathodic arc evaporation apparatus including a target which has a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer border of the target surface; an anode having an electron receiving surface, the anode encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface being essentially in parallel to at least an outer region of the target surface so that magnetic field lines are in parallel to the target surface or inclined to it in an acute angle , whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle 45.

A deposition apparatus includes a chamber including an internal space where a deposition process takes place, and at least one magnet unit positioned below the chamber and including a first magnet member and a second magnet member, the second magnet member being positioned around an outer periphery of the first magnet member and spaced apart from the first magnet member, wherein the first magnet member includes a first magnet main body, which extends in a first direction, and a first magnet extension, which is positioned at at least one end of the first magnet main body and has a width greater than a width of the first magnet main body in a second direction intersecting the first direction, and the first magnet extension includes a penetration hole.

There is provided a substrate processing system comprising: a plurality of transfer modules having transfer mechanisms configured to transfer substrates; and a plurality of process modules connected to the plurality of transfer modules. The transfer mechanisms of the plurality of transfer modules transfer a plurality of substrates sequentially and serially to the plurality of process modules, and each of the plurality of transfer modules has an aligner configured to align a substrate when transferring the substrate to the process module connected to a relevant transfer module.

A cathodic arc evaporation apparatus including a target having a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer border of the target surface; an anode having an electron receiving surface and encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface essentially in parallel to at least an outer region of the target surface so that magnetic field lines are parallel to the target surface or inclined to it in an acute angle , whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle 45.

A sputter deposition source for depositing a material on a substrate is described. The sputter deposition source includes an array of magnetron sputter cathodes arranged in a row for coating the substrate in a deposition area on a front side of the array. At least one magnetron sputter cathode of the array includes a first rotary target rotatable around a first rotation axis (A1); and a first magnet assembly arranged in the first rotary target and configured to provide a closed plasma racetrack (P) on a surface of the first rotary target that extends along the first rotation axis (A1) on a first side and on a second side of the at least one magnetron sputter cathode. Further described is a magnetron sputter cathode for a sputter deposition source and a method of depositing a material on a substrate.