The tantalum-doped molybdenum disulfide/tungsten disulfide (MoS.sub.2/WS.sub.2) multi-layer film includes a titanium transition layer, a titanium/tantalum/molybdenum disulfide/tungsten disulfide (Ti/Ta/MoS.sub.2/WS.sub.2) multi-layer gradient transition layer, and a tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer which are successively laminated in a thickness direction. The preparation method includes: successively depositing the titanium transition layer, the Ti/Ta/MoS.sub.2/WS.sub.2 multi-layer gradient transition layer, and the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer on the surface of a matrix by adopting a magnetron sputtering technology to obtain the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film. The tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film has good matrix binding strength, hardness and elasticity modulus, good friction and abrasion performance, good temperature self-adopting performance, heat and humidity resistance, and high temperature oxidization resistance under an atmospheric environment at different temperatures, and can meet the requirements of stable lubrication and long-life service of aerospace vehicles.

A novel sputtering apparatus capable of separating functions can be provided. A sputtering apparatus is capable of forming a semiconductor film and includes a first target, a first power source connected to the first target, a first shutter facing the first target, a first driver portion connected to the first shutter, a second target, a second power source connected to the second target, a second shutter facing the second target, and a second driver portion connected to the second shutter. The first driver portion and the second driver portion operate in conjunction with each other.

A method for depositing a coating on a substrate (100), including successively depositing a thin intermetallic layer (110) on the substrate (100), so as to obtain an external part (10), and annealing the external part (10) in a dedicated enclosure.

A deposition method that improves the direct vapor deposition process by enabling the vapor deposition from multiple evaporate sources to form new compositions of deposition layers over larger and broader substrate surface areas than heretofore could be covered by a DVD process, including providing layers with varying vapor pressures onto the substrate, as well as columnar thermal barrier over an environmental barrier and the gradual modification of the composition of the environment barrier coating and/or columnar thermal barrier coating.

A high-entropy alloy film, the composition of which includes titanium, zirconium, niobium, tantalum and iron. The high-entropy alloy film is made with a combination of elements with high biocompatibility, and its formation of non-crystalline structure is further improved by adding iron. Furthermore, as the content of titanium in the high-entropy alloy film is adjusted, the microstructure, mechanical properties, and corrosion resistance of the high-entropy alloy film is changed as well.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.

A workpiece having a coating, said coating comprising at least one Ti.sub.XSi.sub.1-xN layer, characterized in that x≦0.85 and the Ti.sub.xSi.sub.1-xN layer contains nanocrystals, the nanocrystals present having an average grain size of not more than 15 nm and having a (200) texture. The invention also relates to a process for producing the aforementioned layer, characterized in that the layer is produced using a sputtering process, in which current densities of greater than 0.2 A/cm.sup.2 arise on the target surface of the sputtering target, and the target is a Ti.sub.XSi.sub.1-xN target, where x≦0.85. An intermediate layer containing TiAlN or CrAlN is preferably provided between the Ti.sub.xSi.sub.1-xN layer and the substrate body of the workpiece.

A bismuth ferrite film material, a method for integrally preparing a bismuth ferrite film on a silicon substrate at a low temperature, and an application, includes: magnetron sputtering a bottom electrode, a buffer layer and a bismuth ferrite film on one surface of a Si substrate in sequence from bottom to top at a processing temperature of 300-400° C.; reducing the temperature to room temperature; and a top electrode is deposited via magnetron sputtering on the surface of the bismuth ferrite film; the buffer layer mentioned hereof is a conductive oxide which matches the lattice of bismuth ferrite and is of a perovskite structure (AB03). According to the present invention, the temperature for preparing the bismuth ferrite film material can be reduced to 450° C. or below, and the bismuth ferrite film material has a high spontaneous electric polarization.

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).