Some embodiments of the present disclosure provide a technique for improving film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, a technique is provided that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.

A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.

Some embodiments of the present disclosure provide a technique capable of improving a film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, there is provided a technique that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

A device for determining the partial pressure or the concentration of a steam in a volume, includes a sensor body that can be oscillated. The temperature of the sensor body can be controlled to a temperature below the condensation temperature of the steam, and the oscillation frequency of the sensor body is influenced by a mass accumulation of the condensed steam on a surface of the sensor body. Means are provided for generating a gas flow from the sensor surface in the direction of the volume through a steam transport channel that adjoins a window to the volume. In order to increase the maximum service life of the sensor body, the means for generating a gas flow has a slit nozzle designed as an annular channel.

The present disclosure provides a film thickness test apparatus and method, and a vapor deposition device. The film thickness test apparatus is arranged for one process cavity, and the film thickness test apparatus comprises: a test assembly; a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; and a drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity.

A cathode arc evaporator of metals and alloys for coating in a vacuum chamber, including an ignition device adapted for initiating an arc discharge, at least one anode, a water-cooled, consumable tubular cathode arranged along a longitudinal axis and rotatable thereabout, an electromagnetic system disposed within the cathode and adapted for forming an arch-like magnetic field, formed by at least one electromagnetic coil, in the vicinity of a surface of the cathode, resulting in a displaceable cathode spot, which is steerable by the magnetic field, at least one sensor responsive to the proximity of the cathode spot, and a controller which is configured to switch the polarity of the current of the at least one electromagnetic coil in response to the signals received from the at least one sensor.

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

The present disclosure provides an evaporation device and an evaporation method. The evaporation device includes: an evaporation chamber; a plurality of spaced conductive baffles disposed in the evaporation chamber and dividing the evaporation chamber into a plurality of evaporation sub-chambers, the conductive baffles configured to carry charges of a first polarity; an evaporation source disposed in at least one of the evaporation sub-chambers; and a particle charging circuit disposed in at least one of the evaporation sub-chambers. The particle charging circuit is configured to control evaporation material particles generated from the evaporation source in at least one of the evaporation sub-chambers to have charges of the first polarity.