A deposition chamber includes a chamber wall, an optically transparent rod which extends through an aperture in the wall, such that a first end of the rod is exposed inside of the deposition chamber and an opposing second end of the rod is exposed outside of the deposition chamber, a compression collar which is selectively attached to an outer surface of the wall, such that the collar surrounds the second end of the rod, and a gasket disposed around the rod and compressed by the compression collar, such that the gasket secures the rod in the aperture and generates an air-tight seal.

A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

A device for determining the partial pressure or concentration of a vapor in a volume includes a sensor element that can be caused to oscillate and temperature-controlled to a temperature below the condensation temperature of the vapor. The sensor element has an oscillation frequency that is influenced by a mass accumulation formed by condensed vapor on the sensor surface thereof. The rear side of the sensor element pointing away from the sensor surface contacts a thermal transfer surface of a thermal transfer element. The thermal transfer element is formed from an electrically heatable heating element that is connected to a cooling element in a thermally conductive manner by a thermal dissipation surface, which is different from the thermal transfer surface. The thermal transfer surface extends substantially parallel to the thermal dissipation surface.

A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis.

In a preliminary deposition for producing an optical film in which multilayered optical thin-film is formed on a film substrate, a plurality of sputtering chambers are simultaneously energized to deposit a stacked body of thin-films made of two or more different materials on the film substrate, and the thicknesses of the plurality of thin-films are calculated from the optical properties obtained by the optical measuring unit (80) equipped in a sputtering apparatus. Measurement of the thicknesses and adjusting the deposition conditions for thin-films are repeated until the optical properties obtained by the optical measurement unit or the thickness of the respective thin-films calculated from the optical properties falls within a prescribed range.

An evaporation apparatus including a material source, a chamber, a passageway, and a heating component is provided. The material source is configured to provide a deposition material. The chamber includes a manifold. The passageway is configured to be connected to the material source and the manifold. The heating component is disposed in at least a portion of the passageway and configured to heat the deposition material. A calibration method of the evaporation apparatus is also provided.

A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamber 10 which an interior thereof can be made vacuum, the exhauster 20 that exhausts the interior of the chamber 10, the carrier 30 that circularly carries the workpiece W by a rotation table 31 provided inside the chamber 10, and the plurality of the plasma processor 40 that performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processor 40 each has the processing spaces 41 and 42 to perform the plasma processing, at least one of the plurality of the plasma processor 40 is the film formation processor 410 that performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processor 40 is the heater 420 that removes moisture in the chamber 10 by producing plasma and heating the interior of the chamber 10 via the rotation table 31 together with exhaustion by the exhauster 20 and rotation by the rotation table 31 in a condition the film formation process by the film formation processor 410 is not performed.

A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

An evaporation apparatus is disclosed. The evaporation apparatus includes an operation platform; an evaporation source on the operation platform; an inner plate on at least one side of the evaporation source, the inner plate being fixedly connected to the evaporation source; and an outer plate on a side of the inner plate away from the evaporation source, the outer plate being adjacent to the inner plate. The inner plate can be configured to detect an evaporation rate of the evaporation source, and the outer plate can adjust an evaporation range.