The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

A method for manufacturing a novel semiconductor device is provided. The method includes a first step of forming a first oxide semiconductor film over a substrate, a second step of heating the first oxide semiconductor film, and a third step of forming a second oxide semiconductor film over the first oxide semiconductor film. The first to third steps are performed in an atmosphere in which water vapor partial pressure is lower than water vapor partial pressure in atmospheric air, and the first step, the second step, and the third step are successively performed in this order.

The disclosure describes techniques for forming nanoparticles including Fe.sub.16N.sub.2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nanoparticle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe.sub.16N.sub.2, Fe.sub.16(NB).sub.2, Fe.sub.16(NC).sub.2, or Fe.sub.16(NCB).sub.2.

A transfer chamber includes a monolithic chamber body, a transfer robot configured to pass substrates between a factory interface and a processing module in a substrate processing system, a load lock chamber station, a shutter station, a pre-clean chamber station, and a process chamber station integrated within the monolithic chamber body, and a plurality of slit valves integrated within the monolithic chamber body. The plurality of slit valves are configured to open and close the load lock chamber station, the pre-clean chamber station, and the process chamber station each from the shutter station such that the load lock chamber station, the pre-clean chamber station, and the process chamber station maintain respective vacuum pressures.

A system for depositing one or more layers, particularly layers including organic materials therein, is described. The system includes a load lock chamber for loading a substrate to be processed, a transfer chamber for transporting the substrate, a vacuum swing module provided between the load lock chamber and the transfer chamber, at least one deposition apparatus for depositing material in a vacuum chamber of the at least one deposition chamber, wherein the at least one deposition apparatus is connected to the transfer chamber; a further load lock chamber for unloading the substrate that has been processed, a further transfer chamber for transporting the substrate, a further vacuum swing module provided between the further load lock chamber and the further transfer chamber, and a carrier return track from the further vacuum swing module to the vacuum swing module, wherein the carrier return track is configured to transport the carrier under vacuum conditions and/or under a controlled inert atmosphere.

A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

A device has an ion beam source for coating at least one substrate in a vacuum chamber, which chamber has an inlet that is closable in a pressure-tight manner using a closure apparatus and through which the at least one substrate can be fixed in the vacuum chamber in a substrate holder in a substrate holder receptacle, and can be removed therefrom once the coating process has finished, wherein the substrate holder, together with the substrate, in the substrate holder receptacle is designed to be reversibly movable in a translational manner inside the vacuum chamber, between turning points that are in particular settable, using a motor-drivable transport apparatus of the device.

A substrate processing module includes a transfer chamber, an array of processing stations, at least one shutter disk assembly, and a substrate handling device. The array of processing stations is disposed within a transfer volume, and each of the processing stations within the array are configured to selectively process at least one substrate. The shutter disk assembly includes an actuator and a disk blade configured to support a shutter disk coupled thereto. The shutter disk is rotatable between a first position and a second position. In the first position, the disk blade is disposed between two of the plurality of processing stations. In the second position, the disk blade is located under one of the processing stations within the array. The substrate handling device is disposed centrally within the transfer volume and includes a plurality of arms each configured to support and position a substrate.

A vapor deposition device for forming a ceramic coating on a substrate, the device including a coating chamber, loading chambers, substrate support mechanisms, horizontal moving mechanisms, and reversing mechanisms, and configured as follows. The coating chamber and each loading chambers are connected individually to a vacuumizer and are connected to each other at their openings. In the coating chamber, an electron gun is provided that emits an electron beam with which the held ceramic raw material is irradiated. Each of the substrate support mechanisms includes left and right partition walls, a left substrate support plate on the left side of the left partition wall, and a right substrate support plate on the right side of the right partition wall. Each of the substrate support plates has multiple substrate mounting portions for mounting substrates thereon. The left and right substrate support plates are capable of revolving in a plane parallel to the left and right partition walls, and each of the multiple substrate mounting portions is capable of rotating. Each of the horizontal moving mechanisms is configured to cause the substrate support mechanism to move horizontally in the left-right direction between a vapor deposition position where one of the partition walls is in close contact with the opening and a reverse position where the left and right sides of the substrate support mechanism are reversed.

Provided is a rotating shaft sealing device. The rotating shaft sealing device mounted in a semiconductor substrate processing apparatus that processes a semiconductor substrate while rotating a semiconductor loading unit accommodating the semiconductor substrate, includes: a housing that is hollow and mounted in the semiconductor substrate processing apparatus; a rotating shaft accommodated in the housing and connected to the semiconductor loading unit to transfer a rotational force to the semiconductor loading unit; a bearing rotatably supporting the rotating shaft in the housing; a sealing unit including a plurality of seals arranged in the housing to tightly seal a gap between the housing and the rotating shaft; and a power transfer unit mounted at an end of the rotating shaft to transfer a rotational force to the rotating shaft.