The disclosure describes techniques for forming nanoparticles including Fe.sub.16N.sub.2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nano particle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe.sub.16N.sub.2, Fe.sub.16(NB).sub.2, Fe.sub.16(NC).sub.2, or Fe.sub.16(NCB).sub.2.

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

A sensor assembly that includes a substrate and a set of sensors. The set of sensor includes pressure sensor and/or flow sensors located across a surface of the substrate. Each respective sensor of the plurality of sensor is adapted to measure a respective pressure or a respective flow of an environment proximate the respective sensor. Each respective sensor of the plurality of sensor may further be adapted to output a respective signal associated with the measured respective pressure or the measured respective flow. The respective signals associated with the measured respective pressure or the measured respective flows measured by the plurality of sensor together provide a pressure distribution across the surface of the substrate and/or a flow distribution across the surface of the substrate.

A transport system of the in-line coater moves the substrate holder from chamber to chamber in a direction perpendicular to the axis of its rotation and in each process chamber. The system moves the substrate holder to the working area along its axis of rotation. The process chamber has a cavity the size of which is determined by the dimensions of the substrate holder and is sufficient to place technology devices and monitoring instruments in it. In the first embodiment of the in-line coater, the supporting frame of the transport system on which the substrate holder is cantilevered, is configured to move from the chamber to the chamber both in horizontal and vertical positions. In the second embodiment of the in-line coater the supporting frame is configured to move only in a vertical position, and the in-line coater comprises additionally a substrate holder return chamber.

The invention relates to vacuum processing equipment for depositing thin-film coatings. The processing line comprises at least one lock-chamber, a buffer chamber, and a processing chamber, and substrate supports on the carriages configured to pass sequentially through the chambers, with each substrate support in the form of a rotating drum. On each carriage, two rotating drums are installed in a way parallel to the moving direction of one carriage, an additional second carriage is installed with one rotating drum mounted on each carriage coaxially to its moving direction configured to rotate at a constant angular velocity, and carriages are configured to move forward at a constant linear velocity where each point of the drum surface will complete at least two full revolutions when passing through a processing zone.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.

Provided is a rotating shaft sealing device. The rotating shaft sealing device mounted in a semiconductor substrate processing apparatus that processes a semiconductor substrate while rotating a semiconductor loading unit accommodating the semiconductor substrate, includes: a housing that is hollow and mounted in the semiconductor substrate processing apparatus; a rotating shaft accommodated in the housing and connected to the semiconductor loading unit to transfer a rotational force to the semiconductor loading unit; a bearing rotatably supporting the rotating shaft in the housing; a sealing unit including a plurality of seals arranged in the housing to tightly seal a gap between the housing and the rotating shaft; and a power transfer unit mounted at an end of the rotating shaft to transfer a rotational force to the rotating shaft.