Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A substrate film forming machine table and a usage method. The substrate film forming machine table comprises: a first substrate bearing inlet and outlet chamber; a second substrate bearing inlet and outlet chamber; a film forming chamber; an intermediate chamber; a pump set connected to the first substrate bearing inlet and outlet chamber; a second pump connected to the intermediate chamber; a third pump connected to the film forming chamber and the second substrate bearing inlet and outlet chamber; at least one backup pump, which is provided to connect to the film forming chamber and the second substrate bearing inlet and outlet chamber so as to extract air from the film forming chamber and the second substrate bearing inlet and outlet chamber when the third pump is damaged; or, connecting to the intermediate chamber so as to extract air from the intermediate chamber when the second pump is damaged.

Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Ferroelectric ceramics including: a Pb(Zr.sub.1-BTi.sub.B)O.sub.3 seed crystal film formed on a foundation film; and a Pb(Zr.sub.1-xTi.sub.x)O.sub.3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below,
0.1<B<1formula 2
0.1<x<1formula 3.

A method for forming a diamond-like carbon (DLC) coating on an article is provided, comprising: alternatingly performing a deposition process and an ashing process on the article a determined number of times, wherein during the deposition process the method proceeds by forming on the article a layer of DLC which includes graphitic sp.sup.2 carbon and tetrahedral sp.sup.3 carbon, and during the ashing process the method proceeds by selectively etching the graphitic sp.sup.2 carbon, wherein the determine number of time is configured to result in a designated overall thickness of the DLC coating.

The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.