According to the present disclosure, a coated member is provided with a base material and a diamond layer located on the base material. When a ratio (SP3/SP2) obtainable from an SP3 peak derived from diamond crystals measurable by Raman spectroscopy and an SP2 peak derived from a graphite phase is referred to as an SP3 ratio, an SP3 ratio at a first measuring point with a thickness up to 1 m extending from an interface of the base material and the diamond layer toward the diamond layer is higher than an SP3 ratio at a second measuring point that is intermediate in a thickness direction of the diamond layer.

A first diamond layer made of polycrystalline diamonds and doped with foreign atoms, is arranged on a metal surface of a machining tool, and is used to detect the degree of wear of an undoped polycrystalline second diamond layer, which is arranged on the doped diamond layer and forms a functional region of the machining tool, wherein at least one physical parameter is detected continuously or periodically during operation of the tool, and wherein a change in the parameter indicates the degree of wear of the undoped second diamond layer. The doped diamond layer forms an intelligent stop layer for the tool because as a result of change in the transition from the undoped to the doped layer, the conductivity of the system changes, for example, and this change can be used to form a stop signal for the machine drive before the tool and the machined workpiece are damaged.

A diamond substrate according to an embodiment includes a diamond layer including at least one first element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi), the number of threefold coordinated atoms of the at least one first element in the diamond layer being larger than the number of fourfold coordinated atoms of the at least one first element in the diamond layer, a surface of the diamond layer having an off angle of 10 degrees or less with respect to a (111) face.

A diamond coating includes a first diamond layer made of minute diamond particles and a second diamond layer made of coarse diamond particles: in a flank-face side diamond coating, a mean coat thickness d2 is not less than 3 m and not more than 25 m, a first diamond layer is formed on a surface side and a second diamond layer is formed on a tool base side: a rake-face side diamond coating is in a smaller range of 50 m or 1/10 of a tool diameter from a tip of a base cutting-edge part; in the rake-face side diamond coating, a mean coat thickness d1 is a smaller one in a range not less than 0 m and not more than 5.0 m or a range less than d2: and a boundary part between the first diamond layer and the second diamond layer.

A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

In this diamond-coated cemented carbide cutting tool, (1) an average particle size of WC particles is 0.5 to 0.9 m, (2) (R.sub.z) being 0.5 to 1.0 m, a maximum distance between the concave and convex () is 0.5 to 1.5 m, a length (Y.sub.e) is 0.5 to 2.0 m, (3) a sum of areas of WC particles, which satisfies (L.sub.1) being 0.4 to 0.8 m, (L.sub.2) being 0.2 to 0.4 m, and (L.sub.1)/(L.sub.2) being 1.5 to 2.5, is 70 area % or more, (4) an average grain size of diamond crystals in a region of 0.5 to 1.5 m from the body interface is 0.1 to 0.3 m, and (5) columnar crystals satisfying at least one of: a ratio of crystals, which has a growth direction shifted in 10 degrees or less from the diamond film thickness direction, being 90% or more; or an orientation ratio of <110> being 30 to 70%.

In some embodiments, apparatuses and methods are provided herein useful for sensing pressure. In some embodiments, miniature housings are manufactured at ends of optical fibers. In some embodiments, a diamond diaphragm is provided on a hollow housing that receives a fiber optic cable and is sealed to form a Fabry-Perot cavity. In some forms, a plurality of sensors may be manufactured in batch.

A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.

Disclosed are a method of manufacturing a diamond electrode by a chemical vapor deposition (CVD) process, and a diamond electrode manufactured by the method. The method of manufacturing the diamond electrode includes: introducing a carbon source gas to form niobium carbide (NbC) on a niobium substrate, immediately before depositing an electrically conductive diamond layer on the substrate by a hot-filament chemical vapor deposition (HFCVD) process; and depositing electrically conductive diamond layers on the substrate by two or more separate processes. Accordingly, a pinhole present during deposition of the electrically conductive diamond layer is filled such that the contact between an electrolyte and the substrate in an electrolytic environment will be minimized so as to retard the corrosion of the substrate, thereby providing a diamond electrode having a long life span.