A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

A semiconductor substrate according to the present invention includes a nitride semiconductor layer 203, an amorphous semiconductor layer 205 formed on one main surface side of the nitride semiconductor layer 203, a high-roughness layer 206 which is a semiconductor layer formed on the amorphous semiconductor layer 205 and has a surface roughness larger than the amorphous semiconductor layer 205, and a diamond layer 207 formed on the high-roughness layer 206. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.

A diamond coated glass structure can include a glass substrate with a deposited nanocrystalline diamond coated on the glass substrate. An ultrananocrystalline diamond layer can be deposited on the deposited nanocrystalline diamond. The combination of deposited nanocrystalline diamond and ultrananocrystalline diamond can have less than 9 nanometer RMS surface roughness.

A method for preparing a diamond is disclosed. The method includes: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films, using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, the plasma chemical vapor deposition method using multi-energy source coupled plasma and, post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

A coated tool in a non-limiting embodiment of the present disclosure includes a base composed of WC-based cemented carbide including a WC particle and a binding phase, and a diamond film located on the base. In a cross section orthogonal to a surface of the coated tool, the base has a lower content of the binding phase in a surface of the base than a midportion of the base. In an interface region between the base and the diamond film, a WC particle located away from the base is an isolated WC particle, and the number of the isolated WC particle present per interface length of 10 ?m is 4 or less. A cutting tool in a non-limiting embodiment of the present disclosure includes the above coated tool.

Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.

A foamed skeleton reinforced composite, comprising a foamed skeleton and a matrix material. The foamed skeleton is selected from at least one of a metal foamed skeleton, an inorganic non-metal foamed skeleton, and an organic foamed skeleton. The matrix material is selected from a metal or a polymer.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

A reactor for a hot filament CVD, the reactor may include an array of filaments; a substrate support unit that is configured to support at least one substrate; a chamber that comprises multiple openings; a gas flow control unit that is coupled to the multiple openings and is configured to receive one or more CVD gases and direct the one or more CVD gases at one or more predefined directions within an energizing region formed by the array of filaments; and a movement system that is configured to introduce a movement between the array of filaments and the substrate support unit thereby selectively moving the at least one substrate in the energizing region and out of the energizing region.

An object is to provide a technology capable of suppressing a crack of a crystalline nitride layer which is generated due to a stress caused by difference in thermal expansion coefficients between a crystalline nitride and diamond. A semiconductor device includes a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is disposed on a first main surface of the crystalline nitride layer. The diamond layer is disposed at least on a lateral portion of the structure and has a void between the diamond layer and the first main surface of the crystalline nitride layer. The void is a stress absorbing space, for example.