A carbon film forming method, that introduces a raw material gas including carbon into a film forming chamber, ionizes the gas by using an ion source, accelerates the ionized gas, and radiates the ionized gas to a surface of a substrate to form a carbon film on the surface of the substrate, includes forming the carbon film while rotating a first magnet, which is provided on the opposite side of the substrate across a region in which the raw material gas is ionized so as to be eccentric and/or inclined with respect to a central axis connecting the center of the ion source and a position corresponding to the center of the substrate held by the holder, in a circumferential direction.

A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

A method of forming a layer of diamond-like carbon on a workpiece includes supporting the workpiece in a chamber with the workpiece facing an upper electrode, and forming a plurality of successive sublayers to form the layer of layer of diamond-like carbon by alternating between depositing a sublayer of diamond-like carbon on the workpiece in the chamber and treating the sublayer with a plasma of the inert gas or an electron beam from the upper electrode.

It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene comprising includes forming a vacuum chamber comprising a first toroidal plasma source comprising a conduit and a magnetic core, a second toroidal plasma source comprising a conduit and a magnetic core, and a process chamber that is common to both the first and second toroidal plasma source. Gas is introduced into the vacuum chamber. A first RF electromagnetic field is applied to the magnetic core surrounding the conduit of the first toroidal plasma source to form a first toroidal plasma loop discharge in the vacuum chamber. A second RF electromagnetic field is applied to the magnetic core surrounding the conduit of the second toroidal plasma source to form a second toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that at least one of the first and second toroidal plasma loop discharges generates atomic hydrogen.

The purpose of the present invention is to obtain a protective film having a segmented structure that is stable in terms of strength and that prevents the destruction or damage of a groove structure due to load deformation stress from outside and inside forces, by means of, in particular, a structure that connects a side surface of a groove to the bottom section of the groove and a structure of the bottom section of the groove. The present invention is a protective film having a segmented structure, the film being formed by depositing a film on a base material, wherein the protective film is obtained by depositing the protective film, after machining a groove in the base material, forming spaces between the segmented protective film on the base material, and the vertical cross-sectional surface of a part where the groove side surface and the groove bottom surface intersect is connected by a downward convex curve and the vertical cross-sectional surface of the bottom section of the groove is a downward convex curve or a straight line.

A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene includes forming a vacuum chamber comprising a conduit and a process chamber. A gas is introduced into the vacuum chamber. An RF electromagnetic field is applied to a magnetic core to form a toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that the toroidal plasma loop discharge generates atomic hydrogen.

The present invention provides a charged particle source comprising a plasma processing chamber that has a plasma source, a gas supply and an ion extraction grid that are each operatively connected to the processing chamber. A conducting plate is located adjacent to a wall of the plasma source. The conducting plate has a surface with a plurality of grooves that face the wall of the plasma source. A substrate support is disposed within an interior portion of the processing chamber for supporting a substrate.

Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cm.sup.2 and 10 W/cm.sup.2 and a pulse width which is less than 100 s and greater than 30 s, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate.

Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700 C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.