Plasmonic diamond films are provided. In an embodiment, a plasmonic diamond film comprises a plurality of plasmonic nanoparticles encapsulated by diamond and distributed on an underlying surface of diamond. Methods of forming the plasmonic diamond films are also provided.

Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

Disclosed is a method of forming a conductive diamond layer on a surface of a carbon fibre substrate that is used as a component of an electrode for neural stimulation and/or electrochemical sensing. The method comprises functionalising at least a portion of the surface with a functionalising agent to facilitate coating the surface with the conductive diamond layer. The method also comprises providing a diamond precursor and depositing the diamond precursor over the functionalising agent to form the conductive diamond layer. The disclosure also relates to an electrode that is used as a component of an electrode for neural stimulation and/or electrochemical sensing.

Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.

A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

A method for manufacturing an ultra small grain-size nanocrystalline diamond film having a SiV photoluminescence, comprises: (1) manufacturing, on a single crystal silicon substrate, a nanocrystalline diamond film having a SiV photoluminescence by using a microwave plasma chemical vapor deposition method; (2) performing oxygen plasma etching treatment on the nanocrystalline diamond film obtained in step (1) for 5-30 min by using an oxygen plasma bombardment method in a mixed gas plasma having an oxygen-nitrogen gas volume ratio of 1:4-6 and at an atmospheric pressure of 0.5-6 torr and a microwave power of 600-1000 W, thereby obtaining the ultra small grain-size nanocrystalline diamond film having the SiV photoluminescence.

Provided is a machining jig on which a carbon film (3) is formed on a machining surface of a rigid substrate (1), in which the carbon film (3) indicates a Raman spectroscopy spectrum with an intensity ratio, represented by the formula: I.sub.D/I.sub.G (where I.sub.D is the maximum peak intensity at 1333±10 cm.sup.−1 in the Raman spectroscopy spectrum of the carbon film surface, and I.sub.G is the maximum peak intensity at 1500±100 cm.sup.−1 in the Raman spectroscopy spectrum of the carbon film surface), exceeding 0.6. Also provided is a method of manufacturing seamless can bodies, the method including a step of using a mold machining member, on which a diamond film is formed on a machining surface, to press work a metal material onto the machining surface of the mold machining member in a state where a coolant is interposed.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.