The invention relates to a device (1) and a process for applying a doped diamond layer to a substrate (2, 2a) by chemical vapour deposition. The device (1) has a deposition chamber for holding the substrate (2, 2a), a gas activation element (7) in the form of a hollow body with a flow channel (7b) for a process gas, in particular hydrogen, an outlet opening (16) leading from the flow channel (7b) into the deposition chamber (3), a heating device (8) for heating a wall (7a) of the gas activation element (7) surrounding the flow channel (7b) and a solid precursor, other than carbon, within the flow channel (7b).

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

The present disclosure provides a method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped with a metal dopant to form a doped diamond-like carbon film. The metal dopant is thermally annealed to the doped diamond-like carbon film.

The present disclosure related to polycrystalline diamond (PCD) having chemical vapor deposition (CVD) deposits and to PCD elements and drill bits containing such CVD-modified PCD. The present disclosure further relates to method of forming such materials.

Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm.sup.3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 110.sup.14/cm.sup.3 or higher, where M represents a metal or metalloid, and V represents a vacancy.

An electrochemical-deposition printhead assembly includes a substrate made of an insulating material and including openings that extend from a top surface to a bottom surface of the substrate. The electrochemical-deposition printhead assembly also includes deposition anodes that include conductive material that fills the openings. The electrochemical-deposition printhead assembly additionally includes a backplane that is coupled to the substrate. The backplane includes a grid control circuit, which includes an array of row traces, an array of column traces, a row driver circuit, electrically coupled to the row traces, and a column driver circuit, electrically coupled to the column traces. The backplane also includes a power distribution circuit and deposition-control circuits aligned with a deposition grid. Each one of the deposition-control circuits is electrically coupled to the power distribution circuit, an associated one of the row traces, and an associated one of the column traces.

The present invention relates to a method for coating a substrate, preferably a drill, wherein at least one first HiPIMS layer is applied by means of a HiPIMS process. Preferably, at least one second layer is applied to the first HiPIMS layer by means of a coating process that does not contain a HiPIMS process.

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.