Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

An automated preparation method of a SiC.sub.f/SiC composite flame tube, comprising the following steps: preparing an interface layer for a SiC fiber by a chemical vapor infiltration process, and obtaining the SiC fiber with a continuous interface layer; laying a unidirectional tape on the SiC fiber with the continuous interface layer and winding the SiC fiber with the continuous interface layer to form and obtaining a preform of a net size molding according to a fiber volume and a fiber orientation obtained in a simulation calculation; and adopting a reactive melt infiltration process and the chemical vapor infiltration process successively for a densification and obtaining a high-density SiC.sub.f/SiC composite flame tube in a full intelligent way. The SiC.sub.f/SiC composite flame tube prepared by the present disclosure not only has a high temperature resistance, but also has a low thermal expansion coefficient, high thermal conductivity and high thermal shock resistance.

Embodiments of the present disclosure generally relate to protective coatings on various substrates including aerospace components and methods for depositing the protective coatings. In one or more embodiments, an aerospace component has a protective coating containing an aluminum oxide layer disposed on a surface of the aerospace component, a metal-containing catalytic layer disposed on the aluminum oxide layer, and a boron nitride layer disposed on the metal-containing catalytic layer. The aerospace component contains a superalloy having at least nickel and aluminum. In some examples, the aerospace component is a turbine blade, a turbine vane, a support member, a frame, a rib, a fin, a pin fin, a fuel nozzle, a combustor liner, a combustor shield, a heat exchanger, a fuel line, a fuel valve, an internal cooling channel, or any combination thereof.

A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein. ##STR00001##

Methods of making hexagonal boron nitride coatings upon stainless steel and other ferrous metal/alloy materials, compositions thereof, and methods of using same, such as in electrothermal membrane distillation systems using hexagonal boron nitride coated metal mesh.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

Various embodiments herein relate to methods, apparatus, and systems for depositing a boron-based ceramic film on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600C or less), while still achieving very high quality materials that exhibit good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The films herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the films may be formed through a reaction between a boron halide and a saturated or unsaturated hydrocarbon, in the presence of plasma.

Exemplary semiconductor processing methods may include providing a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the boron-containing precursor and the nitrogen-containing precursor in the processing region. A temperature of the substrate may be maintained at less than or about 500° C. The methods may include forming a layer of material on the substrate. The layer of material may include hexagonal boron nitride. The methods include subsequent forming the layer of material on the substrate for a first period of time, halting delivery of the boron-containing precursor. The methods may include maintaining a flow of the nitrogen-containing precursor for a second period of time, and increasing a plasma power while maintaining the flow of the nitrogen-containing precursor.