Patent classifications
C23C16/342
Method for making a solar cell having a transparent electrode
A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.
METHOD OF MAKING A CERAMIC MATRIX COMPOSITE THAT EXHIBITS CHEMICAL RESISTANCE
A method of making a ceramic matrix composite that exhibits chemical resistance has been developed. The method comprises depositing a compliant layer comprising boron nitride, silicon-doped boron nitride, and/or pyrolytic carbon on silicon carbide fibers, depositing a barrier layer having a high contact angle with molten silicon on the compliant layer, and depositing a wetting layer comprising silicon carbide, boron carbide, and/or pyrolytic carbon on the barrier layer. After depositing the wetting layer, a fiber preform comprising the silicon carbide fibers is infiltrated with a slurry. After slurry infiltration, the fiber preform is infiltrated with a melt comprising silicon, and then the melt is cooled, thereby forming a ceramic matrix composite.
METHOD OF MAKING A CERAMIC MATRIX COMPOSITE THAT EXHIBITS MOISTURE AND ENVIRONMENTAL RESISTANCE
A method of making a ceramic matrix composite that exhibits moisture and environmental resistance has been developed. The method includes depositing a diffusion barrier layer comprising boron nitride on silicon carbide fibers and depositing a moisture-tolerant layer comprising silicon-doped boron nitride on the diffusion barrier layer, where a thickness of the moisture-tolerant layer is from about 3 to about 300 times a thickness of the diffusion barrier layer. Thus, a compliant multilayer including the moisture-tolerant layer and the diffusion barrier layer is formed. A wetting layer comprising silicon carbide, boron carbide, and/or pyrolytic carbon is deposited on the compliant multilayer layer. After depositing the wetting layer, a fiber preform comprising the silicon carbide fibers is infiltrated with a slurry. After slurry infiltration, the fiber preform is infiltrated with a melt comprising silicon and then the melt is cooled, thereby forming a ceramic matrix composite.
Coated Cutting Tool Insert with MT-CVD TiCN on TiAI(C,N)
A coated cutting tool includes a substrate of cemented carbide, cermet, ceramics, steel or cubic boron nitride, a multi-layered wear resistant coating and at least two refractory coating layers deposited. The at least two refractory coating layers include a first coating layer and a second coating layer deposited on top of each other. The first coating layer is titanium aluminium nitride or carbonitride Ti.sub.1-uAl.sub.uC.sub.vN.sub.w, with 0.2≦u≦1.0, 0≦v≦0.25 and 0.7≦w≦1.15 deposited by CVD. The second coating layer is titanium carbonitride Ti.sub.xC.sub.yN.sub.1-y, with 0.85≦x≦1.1 and 0.4≦y≦0.85, and is deposited on top of the first coating layer by MT-CVD. The second Ti.sub.xC.sub.yN.sub.1-y coating layer has a columnar grain morphology and the overall fiber texture of the Ti.sub.xC.sub.yN.sub.1-y coating layer is characterized by a texture coefficient TC (1 1 1)>2.
DEPOSITION OF LOW-STRESS BORON-CONTAINING LAYERS
Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.
Substrate assembly, method of forming the same, and electronic device including the same
A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.
Method of forming in-situ boron nitride for ceramic matrix composite environmental protection
A method for forming in situ a boron nitride reaction product locally on a reinforcement phase of a ceramic matrix composite material includes the steps of providing a ceramic matrix composite material having a fiber reinforcement material; and forming in situ a layer of boron nitride on the fiber reinforcement material.
POROUS MATERIALS COMPRISING TWO-DIMENSIONAL NANOMATERIALS
According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.
Method of desizing fiber
A method of preparing a fiber for use in forming a ceramic matrix composite material comprises the steps of removing a polymer coating from an outer surface of glass or ceramic fibers by providing heated and humidified gas across the glass or ceramic fibers for a period of time.
THERMALLY CONDUCTIVE AND PROTECTIVE COATING FOR ELECTRONIC DEVICE
A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal or amorphous structures, different crystalline orientations, different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.