C23C16/347

Amorphous carbon thin film, manufacturing method thereof and optical system including the same

A method of manufacturing an amorphous carbon thin film is provided. The method includes the following steps: providing a substrate in a reaction chamber; flowing a precursor and a carrier gas into the reaction chamber; and performing a PECVD method to deposit the amorphous carbon thin film on the substrate. Wherein, the precursor includes a compound having a C≡N functional group.

NUCLEAR COMPONENT WITH AMORPHOUS CRC COATING

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising amorphous chromium carbide; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising amorphous chromium carbide. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films

The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
20200335328 · 2020-10-22 · ·

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

Method of using DLI-MOCVD to provide a nuclear reactor component with a coating of amorphous chromium carbide

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising amorphous chromium carbide; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Coated tool
10744568 · 2020-08-18 · ·

A coated tool include a first surface, a second surface which is adjacent to the first surface, and a cutting edge which is located on at least a portion of a ridge between the first surface and the second surface. The coated tool further includes a substrate, and a coating layer that is located on the substrate. The coating layer includes a titanium carbonitride layer and an aluminum oxide layer which has an -type crystalline structure. The titanium carbonitride layer is located nearer to the substrate than the aluminum oxide layer. When a value represented by the following equation is taken to be an orientation factor Tc(hkl) on the basis of peaks of the aluminum oxide layer analyzed by X-ray diffraction analysis, a ratio (Tcf(104)/Tcf(012)) of orientation factors Tcf(104) to Tcf(012) of the coating layer on the second surface is higher than a ratio (Tcr(104)/Tcr(012)) of orientation factors Tcr(104) and Tcr(012) of the coating layer on the first surface: Tc(hkl)={I(hkl)/I.sub.0(hkl)}/[(1/7){I(HKL)/I.sub.0 (HKL)}].

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
10734218 · 2020-08-04 · ·

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

VANADIUM NITRIDE FILM, AND MEMBER COATED WITH VANADIUM NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME

In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at %/or less.

Coated extrusion tool

Provided are extrusion tools such as extrusion dies or portions thereof having a surface with at least one coating thereon, and methods of forming the same are disclosed. The at least one coating is formed from a composition that is a metal aluminum nitride or carbonitride with particular characteristics such that the amount of aluminum varies within the coating between a coating outer surface and an intermediate thickness within the coating. The resulting coatings have tailored physical and performance characteristics that result in improved wear and extrusion performance.