Patent classifications
C23C16/403
SEALING SURFACES OF COMPONENTS USED IN PLASMA ETCHING TOOLS USING ATOMIC LAYER DEPOSITION
Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.
Coated tool and cutting tool including same
A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a plurality of first protrusions that project toward the Al.sub.2O.sub.3 layer, and a beam that extends in a direction intersecting a direction in which the first protrusions project, to connect the first protrusions. A cutting tool of the present disclosure is provided with: a holder extending from a first end toward a second end and including a pocket on a side of the first end; and the above-described coated tool located in the pocket.
PART HAVING CORROSION-RESISTANT LAYER, MANUFACTURING PROCESS APPARATUS HAVING SAME, AND METHOD OF MANUFACTURING PART
Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.
Deposition system with vacuum pre-loaded deposition head
A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.
Coated tool and cutting tool including same
A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a first composite protrusion including a first protrusion that projects toward the Al.sub.2O.sub.3 layer and a second protrusion that projects from the first protrusion in a direction intersecting a direction in which the first protrusion projects. A cutting tool of the present disclosure is provided with: a holder extending from a first end toward a second end and including a pocket on a side of the first end; and the above-described coated tool located in the pocket.
METHOD FOR FORMING THIN FILM USING SURFACE PROTECTION MATERIAL
According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.
CUTTING TOOL
A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-Al.sub.2O.sub.3 layer, the α-Al.sub.2O.sub.3 layer includes a plurality of α-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in texture coefficient TC(hkl), and an elastic modulus E1 of the α-Al.sub.2O.sub.3 layer at a room temperature and an elastic modulus E2 of the α-Al.sub.2O.sub.3 layer at 800° C. represent a relation of the following expression B-1:
0<{(E1−E2)/E1}×100<10 Expression B-1.
CUTTING TOOL
A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-Al.sub.2O.sub.3 layer, the α-Al.sub.2O.sub.3 layer includes a plurality of α-Al.sub.2O.sub.3 crystal grains, and has a TC (006) of more than 5 in texture coefficient TC (hkl), and a plastic deformation amount hp of the α-Al.sub.2O.sub.3 layer at 800° C. is 0 nm or more and 100 nm or less.
CUTTING TOOL
A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-Al.sub.2O.sub.3 layer, the α-Al.sub.2O.sub.3 layer includes a plurality of α-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in texture coefficient TC(hkl), and a hardness H1 of the α-Al.sub.2O.sub.3 layer at a room temperature and a hardness H2 of the α-Al.sub.2O.sub.3 layer at 800° C. represent a relation of the following expression A-1:
0<{(H1−H2)/H1}×100<60 Expression A-1.
MEMORY WITH LAMINATED CELL
A memory cell formed in a pillar structure between a first electrode and a second electrode includes laminated encapsulation structure. In one example, the pillar includes a body of ovonic threshold switch material, carbon-based intermediate layers, metal layers and a body of phase change memory material in electrical series between the first and second electrodes. The laminated encapsulation structure surrounds the pillar. The laminated dielectric encapsulation structure comprises at least three conformal layers, including a first layer of material, a second conformal layer of a second layer material different from the first layer material; and a third conformal layer of a third layer material different from the second layer material.