Described are multi-layer coatings, substrates (i.e., articles) coated with a multi-layer coating, and methods of preparing a multi-layer coating by atomic layer deposition, wherein the coating includes layers alumina and yttria.

Disclosed is a thin film stress control-based coating method for large-area coating. The method uses a two-step coating process in which a first coating layer that is a relatively low-hardness layer is primarily formed on a base member and a second coating layer that is a relatively high-hardness layer is secondarily formed on the first coating layer. The method can form a high-density coating structure that is hardly peeled off over a relatively large area compared to conventional coating methods by suppressing internal stress of the coating layers of the coating structure. Further disclosed is a coating structure manufactured by the same method.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI.sub.x, where R is one or more of a C.sub.1-C.sub.10 alkyl, C.sub.3-C.sub.10 cycloalkyl, C.sub.2-C.sub.10 alkenyl, or C.sub.2-C.sub.10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

The invention provides metal liquid chromatography components with uniformly coated internal surfaces and methods for achieving the same. The invention addresses the problem of corrosion or interference of metal components in the flow path for LC analyses in which the sample interacts with metal ions or surfaces. The invention also alleviates the difficulties in coating very long metal tubes and very small metal channels with an inert, continuous coating that adheres well to metal surfaces. The metal flow path is rendered inert by the coating, and thus compatible with bioanalytical separations, for example, by using a vapor phase deposition process to coat the inner surfaces with a coating that continuously covers all metal surfaces in the flow path.

A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.