Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

The invention provides a molten Al—Si alloy corrosion resistant composite coating and a preparation method and application thereof. The composite coating layer comprises an aluminized layer and a TiO.sub.2 film layer from a surface of a substrate to the outside in sequence. The preparation method of the coating layer comprises the following steps: (step S1) making a surface treatment to an Fe-based alloy, and then aluminizing with a solid powder penetrant; (step S2) sand-blasting the aluminized Fe-based alloy; (step S3) washing and drying the Fe-based alloy which has been sand-blasted; and (step S4) depositing the TiO.sub.2 film layer on a surface of the dried aluminized Fe-based alloy by using an atom layer vapor deposition. The application of the molten Al—Si alloy corrosion resistant composite coating is used for a solar thermal power generation heat exchange tube.

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below:

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Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Some embodiments relate to additive manufactured articles having coated surfaces and related methods. The methods may comprise forming a three-dimensional (3D) article by additive manufacturing to obtain an additive manufactured 3D article having a monolithic structure that is not capable of construction by machining, and exposing the additive manufactured 3D article to one or more precursor gases to form a coating layer on a surface of the additive manufactured 3D article. The additive manufactured articles may comprise an additive manufactured three-dimensional (3D) body. The additive manufactured 3D body may have a monolithic structure that is not capable of construction by machining. The additive manufactured 3D body may have a coating layer on a surface of the additive manufactured 3D body.

A method and apparatus for creating a flat optical structure is disclosed. The method includes etching at least one trench in a substrate, placing a dielectric material in at least one trench in the substrate and encapsulating the top of the substrate with a film.

The present disclosure provides a manufacturing method and a grain-oriented electrical steel sheet manufactured thereby, the manufacturing method comprising the steps of: heating a slab; hot rolling the heated slab so as to manufacture a hot-rolled sheet; cold rolling the hot-rolled sheet so as to manufacture a cold-rolled sheet; decarburizing and annealing the cold-rolled steel sheet; forming a ceramic coating layer on a portion or the whole of one surface or two sides of the decarburized and annealed cold-rolled sheet by using a chemical vapor deposition (CVD) process; and finally annealing the cold-rolled sheet on which the ceramic coating layer is formed.

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

The present disclosure relates to an apparatus for trapping multiple reaction by-products for a semiconductor process, in which in order to separate, with the single trapping apparatus, reaction by-product mixtures contained in unreacted gases discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, a trapping region division part is provided, which divides a heat distribution region into trapping regions for respective reaction by-products while controlling a flow in a movement direction of an introduced unreacted gas, thereby trapping a reaction by-product aggregated in the form of a thin film in a relatively high-temperature region by using a first internal trapping tower in a front region, and trapping a reaction by-product aggregated in the form of powder in a relatively low-temperature region by using a second internal trapping tower in a rear region.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.