A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ~10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ~0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ~0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ~1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

A method for producing doped, van der Waals ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.

The invention relates to methods for the formation of rare earth nickelate thin films and “doped” (i.e. cation-substituted) variants thereof on a substrate using atomic layer deposition (ALD). The films can be deposited at low temperature (e.g. at temperatures as low as 225° C.) and have a range of useful properties including good crystallinity and high electrical conductivity, as well as interesting magnetic, optic and catalytic properties. These properties make the materials suitable for use in microelectronic applications, in the production of electrodes and as catalytic surfaces.

In one aspect, the disclosure relates to method of forming an electrocatalyst structure on an electrode, comprising depositing a first layer on the electrode using atomic layer deposition (ALD), wherein the first layer comprises a plurality of discrete nanoparticles of a first electrocatalyst, and depositing one or more of a second layer on the first layer and the electrode using ALD, wherein the one or more second layer comprises a second electrocatalyst, wherein the first layer and the one or more second layers, collectively, form a multi-layer electrocatalyst structure on the electrode. Also disclosed are electrodes having a multi-layer electrocatalyst structure. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Methods of controlling an amount of soluble base content of material comprising lithium carbonate and other material. Exemplary methods include using atomic layer deposition, selectively depositing one or more of an oxide, a fluoride, and a nitride to form and/or control the soluble base content.

Provided are a zinc-base plated steel material comprising a base steel and a zinc-based plated layer and a post-treatment film, which are sequentially formed on the base steel. The post-treatment film comprises an oxide or oxide salt of at least one group A element selected from B, Al, V, and Fe and an organic compound, wherein the content of oxygen atoms in the post-treatment film is 50 atom % or more, and wherein when the mole number of oxygen atoms forming a covalent bond with hydrogen in the post-treatment film is a and the mole number of oxygen atoms not forming the covalent bond with hydrogen is b, a/b is 0.3 or greater; and a composition for forming the post-treatment film.

An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

There is provided a substrate processing apparatus including a process chamber in which a substrate is accommodated, a processing gas supply system configured to introduce a processing gas containing hydrogen peroxide into the process chamber and an exhaust system configured to exhaust an interior of the process chamber, wherein at least one selected from the group of the process chamber, the processing gas supply system, and the exhaust system includes a metal member, the metal member exposed to the processing gas or a liquid generated by liquefying the processing gas is made of a material containing an iron element, and a surface of a plane of the metal members, which is exposed to the processing gas or the liquid, is formed of a layer containing iron oxide which is formed by performing a baking process on the metal member.