A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films.

The invention discloses a method for preparing a chlorine adsorption material for use in waste incineration and application of the chlorine adsorption material. The chlorine adsorption material adsorptive for chlorine-based substances during the waste incineration is prepared by mixing raw materials which include natural iron ores and quartz stones, and modifying the iron ores and the quartz stones with CaO through an ultrasonic impregnation method. The prepared chlorine adsorption material has a large pore size, a high porosity and a stable structure, and shows higher adsorption efficiency and adsorption capacity for the chlorine-based substances during the waste incineration. The use of the low-cost natural iron ores and quartz stones can reduce the cost in processing the chlorine-based substances, make great use of resources and facilitate environment protection.

Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is 10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at 0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at 0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at 1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

A coated tool include a first surface, a second surface which is adjacent to the first surface, and a cutting edge which is located on at least a portion of a ridge between the first surface and the second surface. The coated tool further includes a substrate, and a coating layer that is located on the substrate. The coating layer includes a titanium carbonitride layer and an aluminum oxide layer which has an -type crystalline structure. The titanium carbonitride layer is located nearer to the substrate than the aluminum oxide layer. When a value represented by the following equation is taken to be an orientation factor Tc(hkl) on the basis of peaks of the aluminum oxide layer analyzed by X-ray diffraction analysis, a ratio (Tcf(104)/Tcf(012)) of orientation factors Tcf(104) to Tcf(012) of the coating layer on the second surface is higher than a ratio (Tcr(104)/Tcr(012)) of orientation factors Tcr(104) and Tcr(012) of the coating layer on the first surface: Tc(hkl)={I(hkl)/I.sub.0(hkl)}/[(1/7){I(HKL)/I.sub.0 (HKL)}].

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Metal complexes containing substituted allyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.