According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

##STR00001## In Chemical Formula 1, L.sub.1 and L.sub.2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R.sub.1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R.sub.2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Provided is a compound represented by the following general formula (1) or (2):

##STR00001##

where R.sup.1 to R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.5 and R.sup.6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M.sup.1 represents a gallium atom or an indium atom;

##STR00002##

where R.sup.7 to R.sup.10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M.sup.2 represents a gallium atom or an indium atom.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Cathode composition including a core cathode body composed of nickel oxide crystallite particles and a surface cathode coating layer contacting and at least partially surrounding an outer surface of the core cathode body. The surface cathode coating layer includes one or more of a transition metal or post-transition metal oxide or fluoride and one or more of lanthanide row atoms having a concentration in a range from about 0.1 to 10 mol %, has a thickness in a range from about 0.5 to 30 nm, and has an amorphous, polycrystalline or composite amorphous/polycrystalline atomic structure. Method of manufacture including preparing a cathode composition includes forming a core cathode body composed of nickel oxide crystallite particles, and, forming by atomic layer deposition, a surface cathode coating layer contacting and at least partially surrounding an outer surface of the core cathode body.

Atomic layer deposition is utilized to deposit a coating on a membrane. The coated membrane exhibits a tightly bound hydration layer upon exposure to water. The resultant coated membrane is oleophobic.

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

The present disclosure relates to the use of a M (II) primary precursor of formula (I):

M(OCR.sup.1R.sup.2R.sup.3) L   (I)

wherein: M is Sn or Ge or Pb; L is a ligand displaying ALD reactivity for a secondary precursor; R.sup.1, R.sup.2, and R.sup.3 are each independently selected from: H or a linear or branched alkyl groups, and wherein at least one of R.sup.1, R.sup.2 and R.sup.3 is a linear or branched alkyl group, or an adduct of a metal (M) (II) precursor of formula (I), in the atomic layer deposition (ALD) of a M (II), M (0), or a M (IV) containing film layer on a substrate.

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R.sup.f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:

(R.sup.fCH.sub.2).sub.nSnX.sub.(4-n)  (I)

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.